液晶与显示 , 2005, 20(5): 434-439. doi: 10.3969/j.issn.1007-2780.2005.05.015
基于AVR单片机的VRAM型彩色液晶显示模块设计
褚东升 1, , 亓庆刚 2, , 岳成亮 3, {"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用提拉法分别生长了具有高光学质量的0.5at％和1.0at％的Ho∶ Sc2SiO5(Ho∶ SSO)激光晶体.研究表明晶体空间群为C2/c,晶胞参数为a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°.Ho3+在SSO基质中的分凝系数为0.82.Ho∶ SSO晶体在2085nm处发射截面为1.12×10-20 cm2,发射光谱呈现一个1850～2150nm的宽发射带.当粒子数反转比率β=0.25时,增益截面σg即开始出现正增益.综合评估了晶体的激光性能,表明Ho∶SSO晶体是一种有潜力的2μm波段激光介质.","authors":[{"authorName":"李璇","id":"371ab50d-cc08-4f32-934d-c8e734636e39","originalAuthorName":"李璇"},{"authorName":"麻尉蔚","id":"1d0386e0-c22d-478e-b36a-3c08ed830629","originalAuthorName":"麻尉蔚"},{"authorName":"马凤凯","id":"dad40e5c-f4bf-4c77-a6c5-cf4e9e0e9b46","originalAuthorName":"马凤凯"},{"authorName":"狄聚青","id":"ba79e876-3260-4b98-a3d0-b5b98f93e449","originalAuthorName":"狄聚青"},{"authorName":"郑丽和","id":"773e77aa-f7a2-4227-ad83-70a39573b24f","originalAuthorName":"郑丽和"},{"authorName":"姜大鹏","id":"fc2a138f-aef5-44a2-970a-0378c1fa7338","originalAuthorName":"姜大鹏"},{"authorName":"苏良碧","id":"eac93686-bbef-40a4-bf90-3c725c63e50a","originalAuthorName":"苏良碧"},{"authorName":"杨秋红","id":"46c02243-eb30-4894-a1d4-846d60fb06e8","originalAuthorName":"杨秋红"},{"authorName":"徐军","id":"007f9640-94eb-4508-be0c-75d831e0a7e9","originalAuthorName":"徐军"}],"doi":"","fpage":"1327","id":"02f30c6a-2091-48f1-9d4f-fe5a4205b363","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"207dca8e-98b7-4032-8793-386e9981891b","keyword":"Sc2SiO5","originalKeyword":"Sc2SiO5"},{"id":"6b23b6d0-a97c-4fb1-bf26-80c3fc4079b7","keyword":"激光晶体","originalKeyword":"激光晶体"},{"id":"a4967208-7d12-4501-88b2-aa2c37725a7b","keyword":"提拉法","originalKeyword":"提拉法"},{"id":"6a1751f5-5fce-4694-a908-4dd0f01ff6ca","keyword":"分凝系数","originalKeyword":"分凝系数"},{"id":"d6f6f61a-8690-4c30-b16d-333a45e441e2","keyword":"发射光谱","originalKeyword":"发射光谱"}],"language":"zh","publisherId":"rgjtxb98201406003","title":"Ho3+掺杂Sc2SiO5激光晶体生长与光谱性能研究","volume":"43","year":"2014"},{"abstractinfo":"以高纯Al2O3为原料，利用石墨发热体和石墨保温桶为碳源，采用导模法生长了α-Al2O3∶C 晶体，研究了氢气退火后得到的α-Al2O3∶C晶体的热致发光和光致受激发光特性.α-Al2O3∶C晶体在460K具有单一一级动力学热致发光峰，热致发光发射波长位于415nm.α-Al2O3∶C晶体的光致受激发光曲线呈指数衰减，衰减曲线由快衰减和慢衰减两部分组成.α-Al2O3∶C晶体的热致发光和光致受激发光剂量响应曲线具有线性亚线性饱和的特点，其中热致发光剂量响应在5×10-6~0.2Gy范围内呈现良好的线性关系，饱和剂量为10Gy；光致受激发光剂量响应在5×10-6~10Gy范围内呈现良好的线性关系，饱和剂量为30Gy.","authors":[{"authorName":"杨新波","id":"e6787532-473c-4a1e-b950-e54dba86b8c0","originalAuthorName":"杨新波"},{"authorName":"李红军","id":"e60b6d40-b3c3-40fc-ae8b-e5c1f96f12e9","originalAuthorName":"李红军"},{"authorName":"毕群玉","id":"cdb5c6fe-cc7a-42b2-bb8e-3a264b5ec350","originalAuthorName":"毕群玉"},{"authorName":"程艳","id":"76ea126b-720a-4b8e-9926-27397de5523f","originalAuthorName":"程艳"},{"authorName":"苏良碧","id":"47d26931-edff-4b03-b10e-6006635657b9","originalAuthorName":"苏良碧"},{"authorName":"唐强","id":"86acd590-ed83-4d20-9c2a-23d494f44b12","originalAuthorName":"唐强"},{"authorName":"徐军","id":"2ef929f7-e1ab-4608-a2d8-30fb7f22e685","originalAuthorName":"徐军"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00255","fpage":"255","id":"39825957-6f52-4667-9f52-fe5f1059feb7","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a2707bb1-7c96-4593-bd74-d6ec996e8bde","keyword":"α-Al2O3∶C","originalKeyword":"α-Al2O3∶C"},{"id":"0b29225d-3f4a-4c4d-82ce-25c8148bdcfc","keyword":" thermoluminescence","originalKeyword":" thermoluminescence"},{"id":"c8db86ac-ef4c-43d7-9059-772bd719d2a0","keyword":" optically stimulated luminescence","originalKeyword":" optically stimulated luminescence"},{"id":"7026e2c8-173b-475f-87c5-54af0e2c5416","keyword":" edge-defined","originalKeyword":" edge-defined"}],"language":"zh","publisherId":"1000-324X_2009_2_3","title":"导模法生长α-Al2O3∶C晶体","volume":"24","year":"2009"},{"abstractinfo":"采用导向温度梯度法(TGT)生长CaF2晶体,建立了生长炉内的垂直温度梯度场.研究表明影响晶体质量及光学性能的主要因素包括坩埚材料、温度场、生长程序及原料纯度等.从大量的实验中总结出TGT法生长高质量CaF2晶体的生长条件如下:石墨坩埚;轴向梯度≤2℃/mm;生长降温速率1.5～2.5℃/h;冷却速率≤40℃/h.","authors":[{"authorName":"苏良碧","id":"e87d5a72-5eae-4c37-80d9-b600974f66f9","originalAuthorName":"苏良碧"},{"authorName":"董永军","id":"3c55d5b7-594c-4103-8ca5-ee55c14a0e20","originalAuthorName":"董永军"},{"authorName":"杨卫桥","id":"d99af757-f070-450f-a883-b1dc03e3ea5f","originalAuthorName":"杨卫桥"},{"authorName":"周国清","id":"ec238281-e5cf-4d98-aca2-52299324fc8b","originalAuthorName":"周国清"},{"authorName":"周圣明","id":"80aec78b-c527-452f-8e53-65c5575261ba","originalAuthorName":"周圣明"},{"authorName":"赵广军","id":"86e2c5aa-94a8-44fb-9d5a-3ff52823e9df","originalAuthorName":"赵广军"},{"authorName":"徐军","id":"1ddf1262-0345-4451-a51f-b499f5a085eb","originalAuthorName":"徐军"}],"doi":"10.3969/j.issn.1000-985X.2004.01.019","fpage":"88","id":"87a66856-5260-4fcf-baf8-e8846bb84e2c","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"a40f79e4-bade-4113-84d5-5d3200070091","keyword":"氟化钙(CaF2)晶体","originalKeyword":"氟化钙(CaF2)晶体"},{"id":"ddf50ef8-7247-4b67-9f37-680a8944faf7","keyword":"温度梯度法(TGT)","originalKeyword":"温度梯度法(TGT)"},{"id":"bf63aade-ab41-4597-8ce8-9b7eedbfa240","keyword":"位错密度","originalKeyword":"位错密度"},{"id":"3d1fe61f-18bc-40ad-b138-7e81ce8175c5","keyword":"透过率","originalKeyword":"透过率"}],"language":"zh","publisherId":"rgjtxb98200401019","title":"CaF2晶体的生长与光学性能","volume":"33","year":"2004"},{"abstractinfo":"采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石, 使用化学机械抛光加工衬底表面, 对衬底的结晶质量、光学性能和加工质量进行了研究. 结果显示r面蓝宝石衬底基本性能参数如下：平均半峰宽值为19.4arcsec; 位错密度为5.6×103cm-2, 波长大于300nm时的平均透过率大于80％; 光学均匀性Δn=6.6×10-5; 平均表面粗糙度为0.49nm. 结果表明, 温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高, 达到了GaN外延衬底的标准. ","authors":[{"authorName":"杨新波","id":"8dd176c7-09b3-4d0d-974a-7a79d510e752","originalAuthorName":"杨新波"},{"authorName":"徐军","id":"3f94b94d-4741-42ef-94fa-e1a2d9f40858","originalAuthorName":"徐军"},{"authorName":"李红军","id":"e31b0755-0694-4ddb-a77a-acc2cdc4e176","originalAuthorName":"李红军"},{"authorName":"毕群玉","id":"60c86ddc-339c-4813-b27d-1af4f731451d","originalAuthorName":"毕群玉"},{"authorName":"程艳","id":"670e5a41-8060-4e3c-b837-5d2fe7546727","originalAuthorName":"程艳"},{"authorName":"苏良碧","id":"72321b8f-edd3-425d-ae03-34de928e8041","originalAuthorName":"苏良碧"},{"authorName":"周国清","id":"9f2bbfc5-ac47-4608-8468-c711d208e00c","originalAuthorName":"周国清"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2009.00783","fpage":"783","id":"d4e34a68-15da-4a14-858f-b220162e849b","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a67043b2-2526-4bd2-b4a4-061ed70048c9","keyword":"r面蓝宝石","originalKeyword":"r面蓝宝石"},{"id":"9cfdb57c-74ca-4099-a30b-e98f123e8253","keyword":" non-polar GaN","originalKeyword":" non-polar GaN"},{"id":"1daa4c57-9f5b-43dd-ba18-43fa09a11aa0","keyword":" substrate","originalKeyword":" substrate"}],"language":"zh","publisherId":"1000-324X_2009_4_29","title":"非极性GaN用r面蓝宝石衬底","volume":"24","year":"2009"},{"abstractinfo":"以高纯Al2O3为原料,利用石墨发热体和石墨保温桶为碳源,采用导模法生长了α-Al2O3:C 晶体,研究了氢气退火后得到的α-Al2O3:C晶体的热致发光和光致受激发光特性.α-Al2O3:C晶体在460K具有单一一级动力学热致发光峰,热致发光发射波长位于415nm.α-Al2O3:C晶体的光致受激发光曲线呈指数衰减,衰减曲线由快衰减和慢衰减两部分组成.α-Al2O3:C晶体的热致发光和光致受激发光剂量响应曲线具有线性-亚线性-饱和的特点,其中热致发光剂量响应在5×10-6～0.2Gy范围内呈现良好的线性关系,饱和剂量为10Gy;光致受激发光剂量响应在5×10-6～10Gy范围内呈现良好的线性关系,饱和剂量为30Gy.","authors":[{"authorName":"杨新波","id":"564f1c39-e9f5-4f6f-85da-c5bcda7e446e","originalAuthorName":"杨新波"},{"authorName":"李红军","id":"66cd58ce-8a63-40fb-baf6-cac984a3cafd","originalAuthorName":"李红军"},{"authorName":"毕群玉","id":"e108581b-f378-4e10-8fae-10a1b7dd1b4a","originalAuthorName":"毕群玉"},{"authorName":"程艳","id":"682a1356-1fa5-4e24-8adc-d469b7b73fbf","originalAuthorName":"程艳"},{"authorName":"苏良碧","id":"cc6d367c-97a6-48c6-a3be-d7665ff14e9e","originalAuthorName":"苏良碧"},{"authorName":"唐强","id":"c3eff17a-1878-4ed8-93ec-b4ef9e0c488b","originalAuthorName":"唐强"},{"authorName":"徐军","id":"2e414d05-7c5f-4621-a2a6-277ce07d4db1","originalAuthorName":"徐军"}],"doi":"10.3724/SP.J.1077.2009.00255","fpage":"255","id":"7ce2dc91-7473-4e4f-942f-873daf382480","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"cb7b2dba-8718-4fca-a845-4ee043a4bb6b","keyword":"α-Al2O3","originalKeyword":"α-Al2O3"},{"id":"8044fc25-5598-4c1b-9d25-07cdff8d16f2","keyword":"C","originalKeyword":"C"},{"id":"322fe44b-e50e-475b-a917-efed603cb70b","keyword":"热致发光","originalKeyword":"热致发光"},{"id":"807b2123-2b8b-44c3-89c5-0c1f892c99af","keyword":"光致受激发光","originalKeyword":"光致受激发光"},{"id":"87ef7452-9f00-48bd-821a-af1924f45c44","keyword":"导模法","originalKeyword":"导模法"}],"language":"zh","publisherId":"wjclxb200902011","title":"导模法生长α-Al2O3:C晶体","volume":"24","year":"2009"},{"abstractinfo":"采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石,使用化学机械抛光加工衬底表面,对衬底的结晶质量、光学性能和加工质量进行了研究.结果显示r面蓝宝石衬底基本性能参数如下:平均半峰宽值为19.4arcsec;位错密度为5.6×103cm-2,波长大于300nm时的平均透过率大于80%;光学均匀性△n=6.6×10-5;平均表面粗糙度为0.49nm.结果表明,温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高,达到了GaN外延衬底的标准.","authors":[{"authorName":"杨新波","id":"e72348a3-f7b8-4802-8b79-7aa8f23314c7","originalAuthorName":"杨新波"},{"authorName":"徐军","id":"24929c46-a954-48a5-b7f0-1ed69238e2ef","originalAuthorName":"徐军"},{"authorName":"李红军","id":"ec485eec-639d-4434-bf87-645f35ffcd12","originalAuthorName":"李红军"},{"authorName":"毕群玉","id":"d8b6cf16-cc15-494b-9cb5-9c4719da5d94","originalAuthorName":"毕群玉"},{"authorName":"程艳","id":"9127daf3-eb4b-4fc5-8750-ef0428c68873","originalAuthorName":"程艳"},{"authorName":"苏良碧","id":"9e416a10-b58d-4de8-9acf-cdac6d39b0e3","originalAuthorName":"苏良碧"},{"authorName":"周国清","id":"4e35ca9e-c8d2-4755-9c45-79f601565b7d","originalAuthorName":"周国清"}],"doi":"10.3724/SP.J.1077.2009.00783","fpage":"783","id":"d6e0a303-66f6-46fa-8887-29ea20e51b3f","issue":"4","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"485f976e-8433-4505-8902-de89b2250325","keyword":"r面蓝宝石","originalKeyword":"r面蓝宝石"},{"id":"169f5330-a2f5-4656-9df2-8f72670c978a","keyword":"非极性GaN","originalKeyword":"非极性GaN"},{"id":"3943d40d-e531-4173-8682-a1b19bb94783","keyword":"衬底","originalKeyword":"衬底"}],"language":"zh","publisherId":"wjclxb200904028","title":"非极性GaN用r面蓝宝石衬底","volume":"24","year":"2009"},{"abstractinfo":"采用光学浮区法生长了尺寸φ8mm×40 mm的Ge∶β-Ga2O3单晶.XRD物相分析表明Ge∶β-Ga2O3单晶仍属于单斜晶系.为对其内部缺陷进行表征,进行了腐蚀实验,在光学显微镜下观察到缺陷密度为6×104/cm2.光学测试表明,与纯单晶相比,Ge∶β-Ga2O3单晶在红外波段存在明显吸收,只有位于蓝光区域的两个荧光峰,抑制了紫外与绿光波段的发光.电学性能测试得出,Ge∶β-Ga2O3单晶的电导率在10-3量级,说明掺杂Ge4+对β-Ga2O3单晶的电学性能的确有改善.","authors":[{"authorName":"吴庆辉","id":"5e19be01-527c-43ab-b61a-6cfd3a586243","originalAuthorName":"吴庆辉"},{"authorName":"唐慧丽","id":"b45eab12-c21f-4703-a776-5003cdf06d92","originalAuthorName":"唐慧丽"},{"authorName":"苏良碧","id":"1e7f2f00-a435-4352-a29c-47f26156845c","originalAuthorName":"苏良碧"},{"authorName":"罗平","id":"8e0961bb-110a-45f0-b30e-6cd56529cd4b","originalAuthorName":"罗平"},{"authorName":"钱小波","id":"b4ccf79d-f812-4ac5-abe9-9c40f521ac02","originalAuthorName":"钱小波"},{"authorName":"吴锋","id":"d0754e36-4d9e-449b-a842-4ad2b2b22ecf","originalAuthorName":"吴锋"},{"authorName":"徐军","id":"8356439b-004a-45f2-8155-439f54bbd66d","originalAuthorName":"徐军"}],"doi":"","fpage":"1440","id":"aeabc2f5-2718-4591-a28a-7081ce81f367","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"69ffe76f-b2f5-4481-99d4-7306e1b8074c","keyword":"Ge∶β-Ga2O3单晶","originalKeyword":"Ge∶β-Ga2O3单晶"},{"id":"650bedce-686a-4640-abae-e88f401a5f95","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"5c429aee-eef9-4f85-b4ae-628df6a674b8","keyword":"光学浮区法","originalKeyword":"光学浮区法"},{"id":"9c62d3d4-0c42-4b23-b3b4-a06f46c78aa3","keyword":"电导率","originalKeyword":"电导率"}],"language":"zh","publisherId":"rgjtxb98201606002","title":"光学浮区法生长掺锗氧化镓单晶及其性质研究","volume":"45","year":"2016"},{"abstractinfo":"采用传统无压烧结工艺制备出透明性良好的掺Ti氧化铝陶瓷;测定了该陶瓷的吸收光谱、荧光光谱和激发光谱.结果表明,掺Ti氧化铝透明陶瓷样品在Mg与Ti掺入离子的摩尔比(NMg/NTi)较小时,表现出Ti3+离子的490nm特征吸收峰,即2T2→2E跃迁产生的宽带吸收;NMg/NTi较大时,陶瓷样品吸收光谱中不存在Ti3+离子吸收,其250nm处吸收为O2-→Ti4+的转移吸收.掺Ti氧化铝透明陶瓷样品Ti3+离子的发射谱线与单晶的相吻合,同时Ti3+在氧化铝陶瓷中分布很均匀,且Ti3+浓度较高时仍处于未畸变的八面体格位当中.氢气氛下烧结的陶瓷样品因MgO添加剂的存在而在410nm处产生Ti4+离子荧光发射;而280nm、420nm左右的荧光发射分别是由F+和F心造成的.","authors":[{"authorName":"杨秋红","id":"d9cb97e1-d3f0-4aba-a454-e064b11ba75d","originalAuthorName":"杨秋红"},{"authorName":"曾智江","id":"e1a8b0a5-ee86-4ade-a0e3-6d60d038f465","originalAuthorName":"曾智江"},{"authorName":"徐军","id":"4790175c-ba38-4f54-ad6a-130226990e1c","originalAuthorName":"徐军"},{"authorName":"苏良碧","id":"a9637045-30d2-4143-a1fe-9032a262fb0d","originalAuthorName":"苏良碧"}],"doi":"10.3969/j.issn.1000-985X.2005.05.019","fpage":"856","id":"0db208e1-79f7-4e94-ae96-1ce2f99109db","issue":"5","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"b05f3cfb-5860-4210-bd19-22c1bc696846","keyword":"Ti:Al2O3透明陶瓷","originalKeyword":"Ti:Al2O3透明陶瓷"},{"id":"2ca4965b-eacb-40cb-811a-5a3fc3b85e9f","keyword":"激光陶瓷","originalKeyword":"激光陶瓷"},{"id":"fdf31996-66b9-469d-a2d2-70a0dc620bc1","keyword":"光谱性质","originalKeyword":"光谱性质"}],"language":"zh","publisherId":"rgjtxb98200505019","title":"Ti:Al2O3透明多晶陶瓷光谱特性分析","volume":"34","year":"2005"},{"abstractinfo":"合成了数均分子量(n)不同的聚乙二醇型端氨基聚氨酯(ATPU2),并用它与E-44环氧树脂配成了综合力学性能好的胶粘剂.用DSC、FT-IR、SEM分别表征了ATPU2/E-44胶粘剂的固化过程、固化产物的结构以及冲击断面形貌,测试了胶粘剂的柔韧性、附着力和剥离强度等力学性能与ATPU结构的关系.结果表明,ATPU2/E-44胶粘剂的中温固化主要是通过端氨基与环氧基反应完成的;它具有的冲击强度高等优异的力学性能与其固化后的交联网络形成了一种由环氧刚性链段和柔性聚乙二醇链段组成的两相结构和产生断裂时能形成微纤结构密切相关.","authors":[{"authorName":"孙涛","id":"9065cd20-3198-40a0-ad21-529130c70691","originalAuthorName":"孙涛"},{"authorName":"官建国","id":"9393af4f-c51d-4743-8e31-708d61a87d5c","originalAuthorName":"官建国"},{"authorName":"余剑英","id":"7b24b375-836d-4e0a-87bb-fadce1948b34","originalAuthorName":"余剑英"},{"authorName":"苏良碧","id":"a2338e63-e860-436a-af0c-93cdac1db9ce","originalAuthorName":"苏良碧"}],"doi":"","fpage":"117","id":"0e22de73-88a7-4530-97b6-fa08fbc71f73","issue":"1","journal":{"abbrevTitle":"GFZCLKXYGC","coverImgSrc":"journal/img/cover/GFZCLKXYGC.jpg","id":"31","issnPpub":"1000-7555","publisherId":"GFZCLKXYGC","title":"高分子材料科学与工程"},"keywords":[{"id":"82e556a2-e572-43b9-905e-9abfbf5fb3bb","keyword":"环氧树脂","originalKeyword":"环氧树脂"},{"id":"b6f0b2bf-fc37-4683-85e6-383a84cc7797","keyword":"端胺基聚氨酯","originalKeyword":"端胺基聚氨酯"},{"id":"ff497c0e-5ca6-40a9-8867-17bc36bd7651","keyword":"柔性固化剂","originalKeyword":"柔性固化剂"},{"id":"fc0022f6-6968-4fdb-8ed5-b38025984bde","keyword":"增韧改性","originalKeyword":"增韧改性"}],"language":"zh","publisherId":"gfzclkxygc200501028","title":"端氨基聚氨酯的合成及增韧环氧树脂的研究","volume":"21","year":"2005"},{"abstractinfo":"用温度梯度法成功生长了直径75mm、完整、透明的氟化钙晶体,对晶体进行了TG-DTA测试分析,确定了其熔点为1413.5℃,并测试了晶体从190nm的紫外波段到40000nm的红外波段的透过率,发现从中紫外波段到红外波段氟化钙晶体的透过率已经能满足各种应用的要求,但在远紫外波段和真空紫外波段(246nm以下)氟化钙晶体的透过率需要进一步提高.","authors":[{"authorName":"董永军","id":"3626ae7a-da8c-4e08-a229-b51d7b6c1b30","originalAuthorName":"董永军"},{"authorName":"周国清","id":"914924c7-27cf-4d0f-a763-5cd76fb08608","originalAuthorName":"周国清"},{"authorName":"苏良碧","id":"81761a78-f626-4423-b0e2-9f156f7494ea","originalAuthorName":"苏良碧"},{"authorName":"杨卫桥","id":"4c6a4c43-f948-4de3-807d-cd9acd36081e","originalAuthorName":"杨卫桥"},{"authorName":"徐军","id":"ef492bbb-142c-4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