采用丝网印刷技术,在Al2O3陶瓷板上印刷、高温烧结内电极及绝缘层制备出陶瓷厚膜基板,进而制备了新型厚膜电致发光显示器(TDEL),整个器件结构为陶瓷基板/内电极/厚膜绝缘层/发光层/薄膜绝缘层/ITO透明电极.对用不同薄膜绝缘材料制备的显示器件的特性进行测试、比较、分析,结果表明薄膜绝缘介质层对器件的阈值电压、发光亮度均有一定的影响,以复合绝缘层的性能最优.最后对器件的衰减特性进行了初步分析.
参考文献
| [1] | 唐春玖,刘祖刚,赵伟刚,等.陶瓷厚膜电致发光器件的特性研究[J].光学学报,1999,19(3):402-406. |
| [2] | Heikenfeld J,Andrew J S.Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer[J].IEEE Transactions on Electron Devices,2002,49(4):557-563. |
| [3] | Murphy J.Thin film electroluminescent device[P].US Patent:4464602,1984-12. |
| [4] | Wu Xingwei,Stiles J,Foo K K,et al.Electroluminescent laminate with thick film dielectric[P].US Patent:5432015,1995-07. |
| [5] | Sugiura K,Katayama M,Ito N.Electroluminescent device and method of producing the same[P].US Patent:6207302 B1,2001-03. |
| [6] | Tiku S K,Rustomji S H.Dielectrics for bright EL displays[J].IEEE Transactions on Electron Devices,1989,36(9):1947-1951. |
| [7] | Wu Li,Xin Yongbao,Michael R W.Insertion layer thick film electroluminescent displays[P].US Patent:6589674 B2,2003-08. |
| [8] | Wu Xingwei,Kupsky G A.Method of forming a thick film dielectric layer in an electroluminescent laminate[P].US Patent:US2004/0033307 A1,2004-05. |
| [9] | 薛唯,周代兵,蒋玉蓉,等.无机厚膜电致发光显示器件的研究 [J].北京理工大学学报,2005,25(2):131-133. |
| [10] | Bringuier.Charge transfer in ZnS type electroluminescence[J].J.Appl.Phys.,1989,66(3):1314-1325. |
| [11] | Alt P M.TFEL displays devices characteristics and performance[J].Proc.of SID,1984,25(2):126-132. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%