阐述用磁控溅射技术制备综合性能优良的ZAO透明导电薄膜及其靶材的发展现状和趋势.介绍了透明导电薄膜的基本性能及其存在的问题,进而重点阐述了ZAO薄膜的组织结构、导电机制和透光特性.由于其优良的光电特性(用掺杂Al2O3质量分数达3 %的溅射靶材可制备电阻率达4.7×10-4 Ω·cm、透射率超过90 %的ZAO薄膜)而具有广泛的应用前景.并针对靶材的制备和利用磁控溅射技术制备ZAO透明导电薄膜过程中存在的问题及发展方向进行了分析讨论.
参考文献
| [1] | 孟扬,杨锡良.新型透明导电薄膜In2O3:Mo[J].真空科学与技术,2000,20(5):331-335. |
| [2] | 彭栋梁,蒋生蕊,李斌.射频反应溅射沉积透明导电CdIn2O4薄膜[J].薄膜科学与技术,1993,6(1):28-31. |
| [3] | 赵谢群.透明导电氧化物薄膜研究现状与产业化进展[J].电子元件与材料,2000,(2):40-41. |
| [4] | Choong Hoon Yi,Itaru Yasui,Yuzo Shigesato.Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by rf-magnetron sputtering[J].Jpn.J.Appl.Phys.,1995,34,Part I(2A):600 -605. |
| [5] | Vink T J,Walrave W,Daams J L C,et al.On the homogeneity of sputter-deposited ITO films stress and microstructure[J].Thin Solid Films,1995,266(1):145-151. |
| [6] | 边继明,李效民,张灿云,等.氮-铟共掺杂ZnO薄膜的制备及表征[J].液晶与显示,2005,20(3):202-204. |
| [7] | Kim K H,Park K C,Ma D Y.Structural,electrical and optical properties of aluminum doped zine oxide films prepared by radio frequency magnetron sputtering[J].J.Appl.Phys.,1997,81(12):7764-7772. |
| [8] | Ghosh S,Sarkar A,Chaudhuri S,et al.Grain boundary scattering in aluminum-doped ZnO films[J].Thin Solid Films,1991,205(6):64-68. |
| [9] | Tadatsugu Minami,Shingo Suzuki.Transparent conducting impurity-co-doped ZnO:Al thin films prepared by magnetron sputtering[J].Thin Solid Films,2001,398(4):53-58. |
| [10] | 吴彬,王万录,廖克俊,等.退火处理对透明导电CdIn2O4薄膜光学、电学性质及其能带结构的影响[J].半导体学报,1997,18(2):151-155. |
| [11] | 葛春桥,薛亦渝,夏志林.AZO透明导电薄膜的制备技术[J].真空电子技术,2004,45(6):51-54. |
| [12] | Frank G,Kauer E,Kostlin H.Transparent heat-reflecting coatings based on highly doped semiconductors[J].Thin Solid Films,1981,77(3):107-108. |
| [13] | Fang Guojia,Li Dejie,Yao Baolun.Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target[J].J Cryst.Growth,2003,247(2):393-394. |
| [14] | 陆峰.氧化锌铝透明导电膜[J].真空电子技术,2003,44(6):39-49. |
| [15] | 赵大庆,范锦鹏,吴敏生,等.ZAO陶瓷烧结模型的研究[J].粉末冶金技术,2002,20(5):267-270. |
| [16] | 吴智华,蒋丹宇,张骋.陶瓷溅射靶材的发展与应用[J].Ceramics Science and Art,2004,38(1):43-47. |
| [17] | Tadatugu Minami,Shingo Suzuki.Transparent conducting impurity-co-doped ZnO:Al thin films prepared by magnetron sputtering[J].Thin Solid Films,2001,398(4):53-58. |
| [18] | Kim K H,Parj J C,Mad Y.Structural,electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering[J].J.Appl.Phys.,1997,81(12):7764-7772. |
| [19] | Tominaga K,Murayama T,Umezu N,et al.Properties of films multilayered ZnO:Al and ZnO deposited by analternating sputtering method[J].Thin Solid Films,1999,343(3):160-163. |
| [20] | 裴志亮.透明导电氧化物ZAO薄膜的研究[J].金属学报,2000,36(1):72-76. |
| [21] | Fortunato E,Nunes P,Marques A,et al.Transparent conductive ZnO:Al thin film deposited on polymer substrates by RF magnetron sputtering[J].Surface and Coatings Technology,2002,151(5):247-251. |
| [22] | 赵大庆,范锦鹏,吴敏生,等.用纳米Al2O3制备超高密度ZAO靶材[J].粉末冶金技术,2005,23(1):44-47. |
| [23] | Gibbons K P,Camiglia C K,Laird R E,et al.Sputtering of ITO from a rotatiry ceramic target[C]// Society of Vacuum Coaters,1998 41st Technical Conference Proceedings.Albuquerque:SVC Publication,1998:159-164. |
| [24] | 龙涛,朱德贵,王良辉.高导电性ZAO陶瓷靶材及薄膜的制备[J].电子元件与材料,2004,2(2):31-34. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%