成功地利用传统的等离子增强化学汽相沉积技术制备了纳米晶硅.为了提高生长初期的结晶速度,在PECVD设备和干法刻蚀设备中,利用H2/SF6等离子体对SiNx薄膜表面进行处理.在制备纳米/微米晶粒结晶硅时常用的氢气稀释条件下,沉积得到了纳米晶硅.利用XRD和TEM观察了氢化纳米晶硅(nc-Si:H)的微结构,发现实验成功得到了小于10 nm的晶体硅.为了检测结构和电学特性,测试了纳米晶硅薄膜的亮态和暗态电导率.室温下,电导率从非晶硅的10-10 S/cm增加到10-5 S/cm.
Nanocrystalline silicon was successfully fabricated by conventional plasma enhanced chemical vapor deposition (PECVD). To promote nucleation rate in the initial stage of silicon growth, surface of SiNx films was treated by H2/SF6 plasma using PECVD and dry etch equipment, respectively. Nanocrystalline silicon was deposited under the condition of highly diluted in hydrogen (H2) which was reported as general methods to form nano/microcrystalline silicon. Microstructure of hydrogenated nanocrystalline silicon (nc-Si:H) films was chara-cterized by XRD and TEM, and under 10 nm nanocrystalline silicon phases were found to successfully grown. Photo and dark state conductivity were also measured to examine structural and electrical property of nc-Si films. Room temperature conductivity jumped from a value of 10-10 to 10-5 S/cm compared a-Si with nc-Si films.
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