根据AlGaInP外延片的结构特点设计了LED型微显示器件的主要结构.利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16 μm×16 μm和2 μm.简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5 μm.采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、AlGaInP层和n-GaAs衬底层进行腐蚀.实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求.
参考文献
| [1] | 郑智斌.InGaAlP-LED发光特性分析[J].液晶与显示,2003,18(6):450-453. |
| [2] | 郑智斌,彭万华.InGaAlP超高亮LED性能及可靠性[J].液晶与显示,2001,16(2):145-149. |
| [3] | Schineller B,Junas Y,Heuken M,et al.Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode[J].Materials Science and Engineering,1998,B51:34-38. |
| [4] | Robinson Kevin.Blue LEDs open door to microdisplays[J].Photonics Spenctra,2001,35:43-44. |
| [5] | Choin H W,Jeon C W,Dawson M D.Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique[J].J.Crystal Growth,2004,268:527-530. |
| [6] | Huang K H,Yu J G,Kuo C P,et al.Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555～620 nm spectral region using a thick GaP window layer[J].Appl.Phys.Lett.,1992,61(9):1045-1047. |
| [7] | 陈练辉.GaInP/AlGaInP多量子阱外延片的生长与光学性质研究[D].华南师范大学硕士学位论文,2004. |
| [8] | Chang S J,Chang C S,Su Y K,et al.Chirped GaAs-AlAs distributed bragg reflectors for high brightness yellow-green light-emitting diodes[J].IEEE Photonics Technology Letts.,1997,9(2):182-184. |
| [9] | Amann Markus Christian,Kappeler Franz.Analytical solution for the lateral current distribution in multiple[J].Appl.Phys.Lett.,1986,48(25):1710-1712. |
| [10] | 周海龙,黄柏标,潘教青,等.GaAs衬底厚度对发光二极管稳定性的影响[J].量子电子学报,2003,2(1):125-128. |
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