在有机发光二极管典型的层状结构中,引入磁控溅射制备Nb2O5超薄膜作空穴注入层,制备了结构为ITO/Nb2O5/TPD/Alq3/A1的器件.Nb2O5层的引入,降低了空穴注入势垒,增强了空穴注入,同时有效阻挡了ITo中ln向有机层的扩散,减少了发光猝灭中心的形成,提高了器件的亮度和效率.研究了不同厚度Nb2 O5层对器件光电性能的影响,发现:当引入Nb2O5层厚度为2 nm时,亮度提高了近2倍,效率由3.5 cd/A增加到了7.8 cd/A,较好地改善了器件的性能,并且性能优于含有CuPc常规注入层的器件.
参考文献
| [1] | Tang C W,VanSlyke S A.Organic electroluminescent diodes[J].Appl.Phys.Lett.,1987'51(12):913-915. |
| [2] | Baldo M A,O'brien D F.High efficient phosphorescent emission from organic electroluminescent diodes[J].Nature,1998,3951151-154. |
| [3] | 刘彭义,唐振方,孙汪典.有机发光器件的研究进展及应用前景[J].暨南大学学报:自然科学版,2002,23(1):66-70. |
| [4] | 邵作叶,郑喜凤,陈宇.平板显示器中的OLED[J].液晶与显示,2005,20(1):52-56. |
| [5] | Aziz H,Popovic Z D.Degradation phenomena in small-molecule organic light-emitting devices[J].Chem.Mater.,2004,16:4522-4532. |
| [6] | Wu C C,Wu C I,Sturm J C,et al.Surface modification of indium tin oxide by plasma treatment:An effective method to improve the efficience,brightness,and reliability of organic light emitting devices[J].Appl.Phys.Left.,1997,70(11):1348-1350. |
| [7] | Li J,Yahiro M,Ishida K,et al.Enhanced performance of organic light emitting device by insertion of conducting/insulting WO3 anode buffer layer[J].Synth Met.,2005,151:141-146. |
| [8] | Chan I M,Hsu T Y,Hong F C.Enhanced hole injections in organic light-emitting devices by depositing nickeloxide on indium tin oxide anode[J].Appl.Phys.Lett.,2002,81(10):1899-1901. |
| [9] | 仲飞,刘彭义,任思雨.磁控溅射制备TiO2空穴缓冲层的有机发光器件[J].功能材料与器件学报,2005,11(4):461-465. |
| [10] | Lai F C,Lin L M,Huang z G,et al.Effect of thickness on the structure,morphology and optical properties of sputter deposited Nb2 O5 films[J].Appl.Surf.Sci.,2006,253:1801-1805. |
| [11] | Qiu C F,Xie Z L,Chen H Y,et al.Comparative study of metal or oxide capped indium-tin oxide anodes for organic light-emitting diodes[J].J.Appl.Phys.,2003,93(6):3253-3258. |
| [12] | Vanslyke S A,Chen C H,Tang C W.Organic electroluminescent devices with improved stability[J].Appl.Phys.Lett.,1996,69(15):2160-2162. |
| [13] | 何智兵,韩高荣,吴卫东,等.真空热蒸发酞菁铜(CuPe)薄膜的结构及光学、电学性能研究[J].真空科学与技术学报,2005,25(4):278-282. |
| [14] | Ding X M,Hung L M,Cheng L F,et al.Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy[J].Appl.Phys.Lett.,2000,76(19):2704-2706. |
| [15] | Deng Z B,Ding X M,Lee S T,et al.Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers[J].Appl.Phys.Lett.,1999,74(15):2227-2279. |
| [16] | Lee S T,Gao z Q,Hung L S.Metal diffusion from electrodes in organic light-emitting diodes[J].Appl.Phys.Lett.,1999,75(10):1404-1406. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%