空穴缓冲层2T-NATA厚度对OLED器件性能的影响

1.陕西科技大学,电气与信息工程学院,陕西,西安,710021

2.陕西科技大学,材料科学与工程学院,陕西,西安,710021

3.陕西科技大学,电气与信息工程学院,陕西,西安,710021

基金项目: 陕西省教育厅科研基金(03JK1610) 国家自然科学基金(20476054)

Effect of Hole Buffer Layer 2T-NATA Thickness on OLED Performances

在有机电致发光器件中,载流子的注入和匹配水平直接影响着器件性能.在器件中引入空穴缓冲传输层2T-NATA,能够有效改善阳极与有机层的接触,改变有机层中的势垒分布,提高载流子的注入和平衡水平,使激子复合率得到有效改善,从而使器件发光特性大幅提高.

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