欢迎登录材料期刊网

材料期刊网

高级检索

利用射频磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的ZnO:Zr透明导电薄膜.讨论了厚度对ZnO:Zr透明导电薄膜光学、电学性能的影响.当薄膜厚度为213 nm时,薄膜电阻率达到最小值1.81×10-3 Ω·cm.所制备的薄膜样品都具有高透光率,其可见光区平均透过率超过了93.0%.当薄膜厚度从125 nm增加到350 nm时,薄膜的光学带隙从3.58 eV减小到3.50 eV.

参考文献

[1] Kim H,Horwitz J S,Kim W H,et al.Doped ZnO thin films as anode materials for organic light-emitting diodes[J].Thin Solid Films,2002,420-421:539-543.
[2] Paul G K,Bandyopadhyay S B,Sen S K,et al.Structural,optical and electrical studies on sol-gel deposited Zr doped ZnO films[J].Materials Chem.and Phys.,2003,79(1):71-75.
[3] Lv M S,Xiu X W,Pang Z Y,et al.Influence of the deposition pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Appl.Surface Science,2006,252(16):5687-5692.
[4] Coutal C,Azéma A,Roustan J C.Fabrication and characterization of ITO thin films deposited by excimer laser evaporation[J].Thin Solid Films,1996,28(1-2):248-253.
[5] Qadri S B,Kim H,Khan H R,et al.Transparent conducting films of In2O3-ZrO2,SnO2-ZrO2 and ZnO-ZrO2[J].Thin Solid Films,2000,377-378:750-754.
[6] 郝晓涛,马瑾,马洪磊,等.薄膜厚度对ZnO:Al透明导电膜性能的影响[J].液晶与显示,2002,17(3):169-174.
[7] 余旭浒,马瑾,计峰,等.薄膜厚度对ZnO:Ga透明导电膜性能的影响[J].功能材料料,2005,36(2):241-243.
[8] Lv M S,Xiu X W,Pang Z Y,et al.Transparent conducting zirconium-doped zinc oxide films prepared by rf magnetron sputtering[J].Appl.Surface Science,2005,252(5):5687-5692.
[9] Ma H L,HAP X T,Ma J,et al.Thickness dependence of properties of SnO2:Sb films deposited on flexible substrates[J].Appl.Surface Science,2002,191(1-4):313-318.
[10] Hao X T,Ma J,Zhang D H,et al.Thickness dependence of structural,optical and electrical properties of ZnO:Al films prepared on flexible substrates[J].Appl.Surface Science,2001,183(1-2):147-142.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%