采用直流磁控溅射工艺,在室温条件下制备了ZnO∶Al(ZAO)薄膜,研究了Al掺杂量和溅射工艺参数等对ZAO薄膜光电性能的影响.结果表明:Al掺杂量和溅射工艺参数均对薄膜的电阻率有显著影响,在Al掺杂质量分数为3%、溅射功率为100 W以及Ar压强为1.5 Pa的条件下,室温溅射淀积的ZAO薄膜可获得1.4×10-3 Ω*cm的最小电阻率;Al掺杂量和工艺参数对薄膜的透光率均无明显的影响,薄膜的平均透光率在86～90%,但随Al掺杂量和溅射功率的增加,薄膜的截止吸收边均向短波长方向移动.对薄膜优值因子的分析表明,适合采用的Ar压强值在0.6～2.0 Pa.
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