用十八烷基三氯硅烷(OTS)修饰了不同厚度的酞菁铜(CuPc)有机薄膜晶体管器件, 对比酞菁铜厚度为15、40、80 nm的3种器件性能后,得到40 nm的酞菁铜器件具有最高载流子迁移率.分析了OTS修饰的绝缘层表面对器件性能的影响,得到的40 nm厚度酞菁铜器件载流子迁移率为4.3×10-3cm2/V*s, 阈值电压为-9.5 V.
参考文献
| [1] | Muccini M.A bright fut ure for organic field-effect t ransistors[J].Nature Materials,2006,(5):605-613. |
| [2] | 张化福,袁玉珍,臧永丽等.p-Si TFT栅绝缘层用SiNx薄膜界面特性的研究[J].液晶与显示,2008,23(1):35-38. |
| [3] | 袁剑锋,阎东航,许武.有机薄膜晶体管阈值电压漂移现象的研究[J].液晶与显示,2004,19(3):168-173. |
| [4] | Dimit rakopoulos C D,Purushot haman S,Kymissis J.Low voltage organic transistors on plastic comprising high dielec tric constant gate insulators[J].Science,1999,183(5403):822-824. |
| [5] | Chen Jinhuo,Wang Yongshun,Zhu Haihua.AFM and XPS study on t he surface and interface states of CuPc and SiO2 Films[J].Chin.J.Semiconductors,2006,27(8):1360-1366. |
| [6] | Schauer F,Zhivkov I,Nespurek S.Organic phthalocyanine films with high mobilitiesfor effeicent field-effect transistor switches[J].J.Non-Crystal.Sol.,2000,266-269:999-1003. |
| [7] | Tessler N,Roichman Y.Two-dimensional simulation of polymer field-effect transistor[J].Appl.Phys.Lett.,2001,79(18):2987-2989. |
| [8] | Li T,Balk J W,Ruden P P.Channel formation in organic field-effect transistors[J].J.Appl.Phys.,2002,91(7):4312-4318. |
| [9] | Vlkel A R,Street R A,Knipp D.Carrier transport and density of state distributions in pentacene transistors[J].Phys.Rev.B,2002,66(19):195336-195343. |
| [10] | Bürgi L,Friend R H,Sirringhaus H.Formation of the accumulation layer in polymer field-effect transistors[J].Appl.Phys.Lett.,2003,82(9):1482-1484. |
| [11] | Schroeder R,Majewski L A,Grell M.A study of the threshold voltage in pentacene organic field-effect transistors[J].Appl.Phys.Lett.,2003,83(15):3201-3203. |
| [12] | Jianfeng Yuan,Jian Zhang,Jun Wang.Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes[J].Appl.Phys.Lett.,2003,82(22):3967-3969. |
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