退火温度对ZnO薄膜晶体管电学性能的影响

液晶与显示 , 2009, 24(4): 557-561. doi: 10.3969/j.issn.1007-2780.2009.04.018

退火温度对ZnO薄膜晶体管电学性能的影响

张新安 ^1, , 张景文 ^2, , 张伟风 ^3, , 侯洵 ^4,

1.河南大学,物理与电子学院,河南,开封,475004;西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

2.西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

3.河南大学,物理与电子学院,河南,开封,475004

4.河南大学,物理与电子学院,河南,开封,475004;西安交通大学,陕西省信息光子技术重点实验室,陕西,西安,710049

关键词：氧化锌 , 薄膜 , 晶体管 , 退火

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

采用光刻剥离法和射频磁控溅射技术在带有热氧化层的硅衬底上制备了以氧化锌(ZnO)为沟道层的薄膜晶体管(ZnO-TFT).研究了不同温度退火处理对ZnO-TFT电学性能的影响,发现随着ZnO薄膜退火温度的增加,ZnO-TFT的阈值电压减小,电子的场效应迁移率增大.用原子力显微镜(AFM)对ZnO薄膜的微区结构进行观察,发现ZnO薄膜的平均粒径随退火温度的增加而增大,表明ZnO-TFT电学性质和沟道层薄膜晶粒大小密切相关.

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退火温度对ZnO薄膜晶体管电学性能的影响

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

参考文献