以非晶硅为晶化前驱物,采用镍盐溶液浸沾的方法可以得到超大尺寸碟型晶畴结构的低温多晶硅薄膜.所得多晶硅薄膜的平均晶畴尺寸大约为50 μm,空穴的最高霍尔迁移率为30.8 cm~2/V·s,电子的最高霍尔迁移率为45.6 cm~2/V·s.用这种多晶硅薄膜为有源层,所得多晶硅TFT的场效应迁移率典型值为70～80 cm~2 /V·s,亚阈值斜摆幅为1.5 V/decade,开关电流比为1.01×10~7,开启电压为-8.3 V.另外,P型的TFT在高栅偏压和热载流子偏压下具有良好的器件稳定性.
Polycrystalline silicon (poly-Si) films consisting of super-large disk-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The prepared disk-like domain SMIC poly-Si has an average domain size of up to 50 μm, highest hole Hall mobility of 30.8 cm~2/V·s, and highest electron Hall mobility of 45.6 cm~2/V·s. P-type poly-Si TFT based on disk-like domain SMIC poly-Si has high field effect mobility of 70~80 cm~2/V~(-1)·s~(-1), sub-threshold slope of 1.5 V/decade, on/off state current ratio of 1.01×10~7 and threshold voltage of -8.3 V. Also, P-type disk-like domain SMIC poly-Si TFTs exhibited excellent reliability under high gate bias-stress and hot carrier bias-stress.
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