在室温下制备了基于In-Zn-Ti-O氧化物半导体的薄膜晶体管,氧化物沟道层中In、Zn、Ti的摩尔比为49:49:2.所制备的器件场致迁移率达到9.8 cm2/V·s,开关比大于105,亚阈值摆幅0.61 V/dec.和未掺Ti器件的比较表明,掺Ti能使器件阈值正向变化,对场致迁移率也有提高作用.
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