本文用XRD、SEM等分析手段,对用Sol-Gel法制备的Gel膜在不同热处理条件下处理后的KTN薄膜进行分析.发现热处理的气氛、升降温速率、烧结温度对薄膜的结构和形貌影响很大,并对其的影响进行了分析讨论.在合适的热处理条件下,在SrTiO3(100,111)衬底上制备出了高取向、晶粒大小均匀、排列紧密、纯钙钛矿结构的KTN薄膜.
参考文献
[1] | TRIEBWASSER S .[J].Physical Review,1959,114(01):63. |
[2] | SHEEL H J;GUNTER P.Crystal Growth of Electric Materials[C].Amsterdam:Elsevier,1985:149. |
[3] | CHEN F S;GEUSIC J E;KURTS SK et al.[J].Journal of Applied Physics,1996,37(01):388. |
[4] | STAFSUDD O M;PINES M Y .[J].Journal of Opt Sci Am,1972,62(10):1153. |
[5] | HULLIGER J;GUTMANN R;WAGLI P .[J].Thin Solid Films,1989,175:201. |
[6] | YILMAZ S;VENKATESAN T;GERHARD-MULTHAUPT K .[J].Applied Physics Letters,1991,58:2479. |
[7] | HIRANO S;YOGO T;KIKUTA K et al.[J].Journal of the American Ceramic Society,1992,75(06):1701. |
[8] | DEBLELY E;GUNTER P;AREND H .[J].Ceramic Bulletin,1979,58:606. |
[9] | HELLERMANN B;BALLER F;GATTER B et al.[J].Ferroelectrics,1991,124:67. |
[10] | SASHITAL S R;KRISHNAKUMAR S;ESENER .[J].Applied Physics Letters,1993,62:2917. |
[11] | GEUSIC J E;KURTS S K;VAN UITERT L G;WEMPLE et al.[J].Applied Physics Letters,1964,4(08):141. |
[12] | BAO D H;KUANG A X;GU H S et al.[J].Chinese Science Bulletin,1992,38(07):550. |
[13] | WANG S M;ZHOU T S;WANG L H et al.[J].Ferroelectrics,1997,195:259. |
[14] | WANG S M;ZHAO J H;LU C J et al.[J].Ferroelectrics,1994,154:289. |
[15] | 卢朝靖;王世敏;王龙海 等.[J].材料研究学报,1995,9:158. |
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