报告了氢化物气相外延技术中,在载气氮气氛中加入氢气对材料表面形貌及材料性质的影响.实验发现生长气氛中氢的存在会显著改进材料的质量,这种作用被归之于氢气氛下氨气在气相中的反应下降以及生长表面较低的氮的活动能力.
Changes in the GaN growth surface morphology and material quality by the addition of H2 into the N2 carrier gas during HVPE are reported. Hydrogen in the growth ambient leads to materials with a narrow bandedge emission photoluminescence (PL) and a decreased linewidth of (0002) symmetric and (1014) asymmetric X-ray diffraction rocking curves. The change of the GaN growth by H2 addition has been ascribed to a reduction in the NH3 gas phase reactions in the presence of H2, leading to a lower N activity at the surface. The lower N activity would then lead to an enhanced surface diffusion of Ga adatoms and these subsequently changes in material properties and structures.
参考文献
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