利用低温Raman散射光谱分析,比较了4种典型处理的Cd0.96Zn0.04Te表面声子散射信号和表面元素沉积的变化.对-220~-90cm-1的反斯托克斯分量进行分析得出,BM液腐蚀后的表面晶格完整性最好;LB液处理有利于进一步改善表面粗糙度和表面漏电流;离子轰击的表面缺陷多,质量差,但对制备良好欧姆接触的电极有现实意义.实验证明Raman散射光谱对于探测表面上元素的沉积和分析表面质量的变化,进而优化表面处理工艺十分有效.
参考文献
[1] | Bevan M J;Doyle N J;Temofonte T A .[J].Journal of Applied Physics,1992,1:204. |
[2] | Sudharsanan R;Vakerlis;Karam N H .[J].Journal of Electronic Materials,1997,6:745. |
[3] | Schwartz G.Proceedings of the society of Photo-optical Instrumentation Engineers[C].SPIE,Bellingham,1981:276. |
[4] | Chen H.;Hu Z.;Shi DT.;Wu GH.;Chen KT.;George MA.;Collins WE.;Burger A.;James RB.;Stahle CM.;Bartlett LM.;Tong J. .LOW-TEMPERATURE PHOTOLUMINESCENCE OF DETECTOR GRADE CD1-XZNXTE CRYSTAL TREATED BY DIFFERENT CHEMICAL ETCHANTS[J].Journal of Applied Physics,1996(6):3509-3512. |
[5] | Chen H;Hayes M;Chattopadhyay K et al.[J].Materials Research Society Symposium Proceedings,1998,487:287. |
[6] | Brajesh K Rai;Bist H D;Katiya R S et al.[J].Journal of Applied Physics,1996,1:477. |
[7] | Brajesh K Rai;Katiyar R S;Ken K-T et al.[J].Materials Research Society Symposium Proceedings,1997,450:287. |
[8] | Amirtharaj P M;Fred H Pollak .[J].Applied Physics Letters,1984,7:789. |
[9] | Levy M.;Khanin E.;Muranevich A.;Nemirovsky Y.;Beserman R.;Amir N. .Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers by Raman, photoluminescence and X-ray diffraction techniques[J].Journal of Crystal Growth,1998(3/4):367-372. |
[10] | Sochinskii N V;Serrano M D;Dieguez E .[J].Journal of Applied Physics,1995,6:2806. |
[11] | Chen H.;Hu Z.;Shi DT.;Wu GH.;Chen KT.;George MA.;Collins WE.;Burger A.;James RB.;Stahle CM.;Bartlett LM.;Tong J. .LOW-TEMPERATURE PHOTOLUMINESCENCE OF DETECTOR GRADE CD1-XZNXTE CRYSTAL TREATED BY DIFFERENT CHEMICAL ETCHANTS[J].Journal of Applied Physics,1996(6):3509-3512. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%