Ⅰ-线光致抗蚀剂可以同时被电子束和光学曝光系统曝光,在50KV加速电压下,其曝光剂量为50-100μC/cm2,曝光后在0.7%NaOH溶液内显影1min.其灵敏度比PMMA快5倍,分辨率为0.5μm.采用两种方法制备GaAs PHEMT,首先,用I线光致抗蚀剂,源、漏及栅的全部都采用电子束曝光,制备了0.5μm栅长的GaAs PHEMT.将源、漏及栅分割成两部分,其中的精细部分由电子束曝光,其余部分由光学曝光系统曝光,用这种方法制备了0.25μm栅长的GaAs PHEMT.
The I-line photo-resist is used as resist exposed by both E-beam and optical system. It is exposed in beam system at 50KV, with dose between 50-100μC/cm2 and developed for 1min. in 0.7% NaOH solution. The sensitivity of I-line photo-resist is 5 times than that of PMMA. Its resolution can get to 0.5μm. Two methods are employed to fabricate GaAs PHEMT. First, all of source and drain as well as gate was exposed by E-beam using I-line photo-resists. The GaAs PHEMT with 0.5μm gate length is fabricated by this way. Second, E-beam lithography is only used to define the fine part of source and drain as well as gate. All the other parts are patterned on a conventional contact optical system. The GaAs PHEMT with 0.25μm gate length is fabricated by this way.
参考文献
| [1] | Tiberio R C et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1988,6:1344. |
| [2] | Haller I et al.[J].INM Res Develop,1968,12:251. |
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