基于量子力学隧穿原理,对由Au纳米粒子自组装体系构建的典型串联双隧道结模型的I-V特性进行了计算机模拟,模拟结果与实验曲线吻合。该方法对于构建纳米电子器件模型及工艺优化将具有指导意义。
Based on the quantum mechanics tunneling theory, the computer simulation of I-V (current-voltage) characteristics of a standard double barrier tunneling junction model which is made of gold nanoparticles self-assembly systems are performed. The simulation results are agreed with the experimental I-V curves. This method may serve as a guide for constructing the model of nano-scale electronic devices and optimizing their technological y parameters.
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