nc－ Si/a－ SiOx:H复合薄膜的结构及光吸收特性

功能材料与器件学报 , 2001, 7(2): 179-182. doi: 10.3969/j.issn.1007-4252.2001.02.015

nc－ Si/a－ SiOx:H复合薄膜的结构及光吸收特性

郭震宁 ^1, , 郭亨群 ^2, , 王加贤 ^3, , 张文珍 ^4, , 李世忱 ^5,

1.华侨大学应用物理系,

2.华侨大学应用物理系,

3.华侨大学应用物理系,

4.华侨大学应用物理系,

5.天津大学精密仪器与光电子工程学院,

基金项目: 国家重点实验室基金(11E01) 国家自然科学基金(69896260)

关键词： nc－Si/a－SiOx:H复合膜 , PECVD技术 , 热退火 , 光吸收

Structure and optical absorption properties of nc－ Si/a－ SiOx:H composite thin film

采用 PECVD技术制备的 a－ SiOx:H (0 SiOx:H基质的量子点复合膜（ nc－ Si/a－ SiOx:H）。利用 TEM技术， Raman散射谱和光吸收谱等 , 较系统地研究了该复合膜的膜结构和光吸收特性。实验结果表明：纳米硅嵌埋颗粒呈多晶结构，颗粒大小随退火温度升高而增大。复合膜光吸收边随纳米硅颗粒尺寸的减小发生了蓝移，表现出明显的量子限域效应。

Sillicon nanocrystals embedded in a－ SiOx:H (0 PECVD technique and high－ temperature annealing treatment. Using TEM technique, Raman scattering and photo－ absorption measurements, the optical properties of the thin films was investigated as well as their structures. The results show that the structure of nc－ Si partical is polycrystalline, and the average diameter of the Si nanocrystals increases with annealing tempereture increasing. Optical absorption pro－ perties of this kind of film was studied . Quantum confinement effect is observed clearly.With decreasing nc－ Si size, the blue shift of the absorption edge is found.

参考文献

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