磁控溅射碳化硅薄膜生长的热力学讨论

功能材料与器件学报 , 2001, 7(3): 273-276. doi: 10.3969/j.issn.1007-4252.2001.03.013

磁控溅射碳化硅薄膜生长的热力学讨论

史兴建 ^1, , 姚合宝 ^2, , 贺庆丽 ^3, , 王文秀 ^4, , 汪颖梅 ^5, , 何大韧 ^6,

1.扬州大学复杂性科学研究中心,

2.扬州大学复杂性科学研究中心,

3.西北大学物理系,

4.扬州大学复杂性科学研究中心,

5.扬州大学复杂性科学研究中心,

6.西北大学物理系,

基金项目: 山西省自然科学基金(G1999064509)

关键词： β－C3N4 , 磁控溅射 , 热力学模型

Thermodynamic discussion on the growth of carbon nitride film by magnetron sputtering

提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β－C3N4,P－C3N4 或－(C2N2)n－的最可能表面反应,然后通过求解这个热力学模型计算了生长参量空间中不同类型薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。

A simple thermodynamic model for fabricating carbon nitride film via magnetron sputtering is suggested. Firstly the most possible surface reactions synthesizing β －C3N4, P－C3N4 or －(C2N2)n－ are selected. Then by solving the thermodynamic model, the partition lines in the growth parameter space are calculated. These lines show the regions where different kinds of films can be deposited. The results are in good agreement with several experimental data.

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