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用费米分布函数对 HBT结构中载流子的分布进行了计算 , 与常用的玻尔兹曼统计律得到的载流子分布进行了比较分析 . 同时在热场发射 -扩散模型的基础上 , 用两种方法得到的载流子分布分别对 InGaP/GaAs HBT进行了数值模拟计算和分析 .

参考文献

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[3] WILLIAM LIU;EDWARD BEANM III;TAE KIM et al.Recent developments in GaInP/GaAs heterojunction bipolar transistors[J].International Journal of High Speed Electronics and Systems,1994,5(03):411-471.
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