设计和制作了硅集成电感,采用常规的硅工艺,在衬底形成间隔的pn结隔离来减少硅衬底的涡流损耗.实验测量了硅集成电感的S参数并研究了衬底结隔离对硅集成电感的电感量和品质因素(Q)的影响.结果表明一定深度的衬底结隔离能有效地使电感Q值提高40%.
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