将氮和氧离子在不同能量下依次注入于硅片,并经1200oC,2h高温退火后,形成具有含有中间硅层的夹心埋层SOI结构.对该样品做俄歇电子能谱(AES)、剖面透射电镜(XTEM)、二次离子质谱(SIMS)和击穿场强等测试,表明退火后形成具有Si-N-O、Si和Si2O夹心埋层的SOI结构.其击穿场强最大为5×106V/cm,与普通剂量SIMOX的相当.测试还发现氮在界面处有明显的富集效应,而且其在前界面的富集行为明显大于其在后界面的.
参考文献
| [1] | Lnesbit;Stiffler S .Formation of Silicon- on- Insulator Structure by Implanted Nitrogen[J].Journal of the Electrochemical Society:Solid State Science and Technology,1985,132(11):2713-2721. |
| [2] | Danlin A B;Drakin K A .Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon[J].Nuclear Instruments and Methods in Physics Research,1991,B58:191-193. |
| [3] | Reeson K J .Fabrication of buried layers SiO2 and Si3N4 using ion beam synthesis[J].Nuclear Instruments and Methods in Physics Research,1987,B19-20:269-1278. |
| [4] | Skorupa W;Wollsclager K .Properties of buried insulation layers in silicon formed by high dose implantation at 60keV[J].Nuclear Instruments and Methods in Physics Research,1988,B32:440-445. |
| [5] | Reeson L J;Hemment P L F .Buried layers of silicon oxy- nitrogen fabrication using ion beam synthesis[J].Nuclear Instruments and Methods in Physics Research,1988,B32:477-432. |
| [6] | Skorupa W;Schoeich J .The buried stacked insulator- a new silicon on insulator structure formed by ion beam synthesis[J].Materials Science and Engineering,1992,B12:63-66. |
| [7] | Josquin W J M J .The application of Nitrogen ion implantation in Silicon technology[J].Nuclear Instruments and Methods in Physics Research,1988,209-210:581-587. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%