SOI(Silicon On Insulator)器件中氧化埋层的隔离作用带来的浮体效应,将显著地影响器件的性能.本文阐述了浮体效应产生的原因以及它对SOI器件和电路的影响,并从体接触和工艺角度两个方面介绍了目前国际上比较优异的抑制浮体效应的几种典型器件结构.
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