成功地设计并制造出 GaAs MESFET霍尔开关集成电路.该电路采用了方形霍尔元件,绝对 灵敏度为 704mV/T;信号处理电路由差分放大电路和触发电路组成,触发电路结构类似于 SCFL 的 D触发器.结果表明,开关性能良好,工作点合理,达到设计要求.实验结果还表明,霍尔元件 和放大电路可构成灵敏度很高的霍尔线性集成电路.
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