提出一种应用于 CMOS图像传感器的新型光电检测器件-双极型光栅晶体管,并建立了 其瞬态等效电路模型,利用电路模拟软件 HSPICE的多瞬态分析法对双极型光栅晶体管的光电 流特性进行了仿真,分析得出这种新型器件在 0.6μ m CMOS工艺参数下,由于引入 pn注入结加 速了光电荷的读出速率,光电流随外加电压呈指数式增长,与普通光栅晶体管相比,蓝光响应特 性有较大改善.
A new photodetector, the bipolar junction photogate transistor, was proposed for CMOS image sensor. The transient model of the bipolar junction photogate transistor was built.The photo- current characteristics of the bipolar junction photogate transistor are obtained under the 0.6μ m CMOS process parameter by applying the multiple- transient methods of the HSPICE software.Due to an injection p+ n junction introduced, the readout rate of the photo- charges increases. The simulating results show that the photocurrent increases following the exterior voltage according to the exponent way and the blue respond characteristic is rather improved.
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