采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.
参考文献
| [1] | 李志坚;周德.VLSI器件电路与系统[M].北京:科学出版社,2000 |
| [2] | Houssa M;Afanas'ev V V;Stesmans A .Polarity depen- dence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks[J].Applied Physics Letters,2001,79:3134. |
| [3] | K. J. Hubbard;D. G. Schlom .Thermodynamic stability of binary oxides in contact with silicon[J].Journal of Materials Research,1996(11):2757-2776. |
| [4] | Qi Wen-Jie;Byoung Hun Lee;Renee Nieh.High- K Gate Dielectrics, Part of the SPIE Conference on Microelectonic Device Technology Ⅲ[A].Santa Clara California September,1999:24. |
| [5] | Ngai T.;Sharma R.;Fretwell J.;Chen X.;Lee JC.;Banerjee S.;Qi WJ. .Electrical properties of ZrO2 gate dielectric on SiGe[J].Applied physics letters,2000(4):502-504. |
| [6] | Wen-Jie Qi;Renee Nieh;Byoung Hun Lee .Electrical and reliability characteristics of ZrO_(2) deposited directly on Si for gate dielectric application[J].Applied physics letters,2000(20):3269-3271. |
| [7] | Angus I Kingon;Jon- Paul Maria;Streiffer S K .Alter- native dielectrics to silicon dioxide for memory and logic devices[J].Nature,2000,406:1036. |
| [8] | Hirofumi Fukumoto;Takeshi Imura;Yukio Osaka .Heteroepitaxial growth of Yttria- Stabilized Zircomia (YSZ) on Silicon[J].Japanese Journal of Applied Physics,1988,27:1404. |
| [9] | Muller D A;Sorsch T;Moccio S et al.The electronic structure at the atomic scale of ultrathin gate oxides[J].Nature,1999,399:758. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%