以硅烷 (SiH4)和硼烷 (B2H6)为气相反应先驱体,采用等离子体增强化学气相沉积法 (PECVD)制备出能应用于液晶光阀光导层的硼掺杂非晶氢硅薄膜. X射线衍射、原子力显微镜和光、暗电导 测试表明,一定程度的硼掺杂提高了非晶氢硅薄膜的电导率、降低了非晶氢硅薄膜的光、暗电导比; 硼掺杂促进薄膜晶态率的增加和硅晶粒尺寸的增大,薄膜的结晶状态将逐渐从非晶硅过渡到纳米 硅,最后发展为多晶硅.红外吸收谱研究表明了大量的硼原子与硅、氢原子之间能形成某些形式的 复合体,仅有少量硼元素对受主掺杂有贡献.
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