欢迎登录材料期刊网

材料期刊网

高级检索

红外热释电探测器的关键是敏感元的研制,而敏感元主要是由具有一定图形的铁电薄膜和上下电极构成.采用半导体光刻工艺,利用化学腐蚀法成功地对PZT铁电薄膜进行了刻蚀,同时采用剥离技术对相应的电极实现了图形化.

参考文献

[1] Dey S K;Zuleeg R .Processing and parameters of Sol- Gel PZT thin films for GaAs memory applications[J].Ferroelectrics,1990,112:309-317.
[2] Seth V K;Schulze W A .Fabrication and characterization of ferroelectric PLZT 7/(65/35) ceramic thin films and fibers[J].Ferroelectrics,1990(112):283-307.
[3] Wenger A B;Brueck S R J;Wu A Y .Integrated PLZT thin film modulators[J].Ferroelectrics,1991,116:195-204.
[4] Scott J F;Paz De Araujo C A .Ferroelectrics Memories[J].Science,1989,246:1400-1405.
[5] Bondurant D.W.;Gnadinger F.P. .Ferroelectrics for nonvolatile RAMs[J].IEEE Spectrum,1989(7):30-33.
[6] 包定华;张良莹;姚熹 .铁电薄膜的图形化研究[J].硅酸盐通报,1998,3(03):59-63.
[7] Paul W Kruse;David D Skatrud.Uncooled infrared imaging arrays and systems[M].Academic Press,1997:165-167.
[8] Walter Lang;Karl Kuhl;Hermann Sandmaier .Absorbing layers for thermal infrared detectors[J].Sensors and Actuators,1992,A34:243-248.
[9] 王文如,杨正兵.微细金属图形制作中的剥离技术[J].压电与声光,2001(01):68-73.
[10] Roy R A;Etzold K F;Cuommo J J.Lead Zirconate- Titanate films produced by facing target rf- sputtering[A].San Francisco,Pittsburgh:Mat Res Soc,1990:77-82.
[11] Kodoh H;Ogawa T;Morimoto A et al.Ferroelectric properties of Lead Zirconate- Titanate films prepared by laser ablation[J].Applied Physics Letters,1991(58):2910-2912.
[12] Ian M R;David V T;Keith G B .Ferroelectric PZT thin films by Sol- Gel deposition[J].Solid-State Science and Technology,1998,13:813-820.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%