射频溅射两步法制备立方氮化硼(c-BN)薄膜

功能材料与器件学报 , 2004, 10(1): 14-18. doi: 10.3969/j.issn.1007-4252.2004.01.003

射频溅射两步法制备立方氮化硼(c-BN)薄膜

冯贞健 ^1, , 邢光建 ^2, , 陈光华 ^3, , 于春娜 ^4, , 荣延栋 ^5,

1.北京工业大学,教育部新型功能材料重点实验室,北京,100022

2.北京工业大学,教育部新型功能材料重点实验室,北京,100022

3.北京工业大学,教育部新型功能材料重点实验室,北京,100022

4.北京工业大学,教育部新型功能材料重点实验室,北京,100022

5.北京工业大学,教育部新型功能材料重点实验室,北京,100022

基金项目: 国家自然科学基金(69876003)

关键词： c-BN薄膜 , 粘附性 , 两步法

Two-step deposition of cubic boron nitride thin film by RF sputtering technique

用常规射频(RF)溅射系统,采用两步法在Si(111)衬底上制备出较高粘附性的立方氮化硼(c-BN)薄膜.沉积过程分为成核(第一步)和生长(第二步)两步,当由第一步变为第二步时,工作气体由Ar气变为Ar和N2的混合气体,衬底温度和偏压也降为较低的值.对不同生长阶段的薄膜进行了SEM、FTIR分析,对最后沉积的薄膜进行了XPS分析.结果表明:采用两步法在Si(111)衬底上沉积的c-BN薄膜内应力较之常规方法减小约11.3GPa,薄膜的B、N原子之比为1.01,c-BN的体积分数为88%,薄膜置于自然环境中6个月尚未有剥离现象.文中还讨论了c-BN薄膜的综合生长机制.

参考文献

[1]	Zhang CY.;Zhong XL.;Wang JB.;Yang GW. .Room-temperature growth of cubic nitride boron film by RF plasma enhanced pulsed laser deposition[J].Chemical Physics Letters,2003(3-4):522-527.
[2]	宋志忠.薄膜物理及其应用讲座第四讲立方氮化硼薄膜的研究现状及其应用前景[J].物理,1995(05):307.
[3]	Zhu PW.;Zhao YN.;Wang B.;He Z.;Li DM.;Zou GT. .Prepared low stress cubic boron nitride film by physical vapor deposition[J].International Journal of Quantum Chemistry,2002(2):420-424.
[4]	Freudenstein R.;Kulisch W. .Improvement of the adhesion of c-BN films by bias-graded h-BN interlayers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):132-138.
[5]	田晶泽,张恒大,宋建华,吕反修,唐伟忠,夏立芳.脉冲偏压下沉积的立方氮化硼膜的断面结构研究[J].真空科学与技术学报,2002(02):127-130.
[6]	Tian J Z;Xia L F;MA X X et al.Characterization of interface of c-BN film deposition on silicon (100) substrate[J].Thin Solid Films,1999(355-356):229-232.
[7]	Dworschak W.;Ehrhardt H.;Jung K. .GROWTH MECHANISM OF CUBIC BORON NITRIDE IN A RF GLOW DISCHARGE[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(1/2):65-74.
[8]	J. Ye;H. Oechsner;S. Westermeyr .Effect of substrate temperature and ion bombardment on the formation of cubic boron nitride films: a two-step deposition approach[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2001(5):2294-2300.
[9]	赵永年,邹广田,王波,何志,朱品文,陶艳春.氮化硼薄膜内应力的红外光谱研究[J].高等学校化学学报,1998(07):1136-1139.
[10]	Hackenberger L B;Pilione L J;Messier R.Effect of Stoichiometry on the Phases Present in Boron Nitride Thin Films[J].Journal of Vacuum Science and Technology,1994(A12):1569.
[11]	Fahy S.Calculation of the strain-induced shifts in the infrared-absorption peaks of cubic boron nitride[J].PHYSICAL REVIEW B,1996(53):11884.

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射频溅射两步法制备立方氮化硼(c-BN)薄膜

Two-step deposition of cubic boron nitride thin film by RF sputtering technique

参考文献