隧道级联大功率半导体激光器热特性分析

1.北京工业大学电控学院,北京市光电子技术实验室,北京,100022

2.北京工业大学电控学院,北京市光电子技术实验室,北京,100022

3.北京工业大学电控学院,北京市光电子技术实验室,北京,100022

4.北京工业大学电控学院,北京市光电子技术实验室,北京,100022

5.北京工业大学电控学院,北京市光电子技术实验室,北京,100022

基金项目: 国家高技术研究发展计划(863计划)(2002AA312070) 北京市自然科学基金(4032007) 国家重点基础研究发展计划(973计划)(G20000683-02)

Thermal characterization of high-power laser diode cascaded by tunnel junction

基于光谱法,通过测量靠近衬底的有源区波长的变化来表征其温度的变化,计算了隧道级联多有源区大功率半导体激光器的热阻.与普通半导体激光器相比,随着有源区数目的增多该热阻有增大的趋势,但并没有成倍增加,主要原因是隧道级联半导体激光器的串连电阻没有成倍增加.

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