Si和C共掺杂的SiO2薄膜的光致发光

功能材料与器件学报 , 2004, 10(3): 284-288. doi: 10.3969/j.issn.1007-4252.2004.03.002

Si和C共掺杂的SiO2薄膜的光致发光

成珏飞 ^1, , 吴雪梅 ^2, , 诸葛兰剑 ^3, , 王文宝 ^4,

1.苏州大学物理系,苏州,215006

2.苏州大学物理系,苏州,215006

3.苏州大学物理系,苏州,215006;苏州大学分析测试中心,苏州,215006

4.苏州大学分析测试中心,苏州,215006

基金项目: 江苏省高校自然科学基金(03KJB140116)

关键词：光致发光 , 红外吸收谱 , 碳化硅 , 双离子束溅射

Photoluminescence of SiO2 films co -doped with silicon and carbon

采用双离子束溅射技术制备了Si和C共掺杂的SiO2薄膜,在N2气氛下进行了不同温度的退火处理.分析了样品在室温下的光致发光(PL)特性,在该样品中观察到分别位于410nm和470nm的两个发光峰.这两个发光峰的强度随着退火温度的变化呈现不同的变化趋势,表明两个发光峰的来源并不相同.用XRD和FTIR测试手段分析了样品的结构,认为470nm的发光来源于中性氧空位缺陷(O3≡Si-Si≡O3),而410nm的发光来源于Si1-xCx纳米晶粒与SiO2基质之间的界面缺陷.

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材料期刊网

Si和C共掺杂的SiO2薄膜的光致发光

Photoluminescence of SiO2 films co -doped with silicon and carbon

参考文献