将Bi2O3掺杂到用溶胶-凝胶法制备的La0 67Sr033MnO3(LSMO)微粉中,XRD测量结果证实有过量的Bi析出.随着Bi掺杂量的增加,LSMO/(Bi2O3)x/2材料电阻率发生明显变化,在x=(0-0.10)摩尔比的掺杂范围内,电阻率先上升后突然下降.当x=0.1时,电阻率比未掺杂样品下降了一个数量级.Bi掺杂对低温和室温磁电阻有着完全不同的影响.低温下,随掺杂量增加,磁电阻下降;室温下Bi的微量掺杂可以使磁电阻增大,掺入x=0.03 Bi使室温磁电阻由-4.4%提高到-5.6%.
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