采用射频磁控溅射在扩镓硅基上溅射Ga2O3薄膜,然后氮化反应组装GaN晶体膜,并研究氮化时间对薄膜晶体质量的影响.测试结果表明:采用两步法生长得到六方纤锌矿结构的GaN多晶膜,扩镓硅层有效的抑制了硅衬底的氮化和弛豫了GaN与Si衬底的热失配.同时显示:在相同的氮化温度下,晶粒尺寸随氮化时间的增加而增大,薄膜的晶化程度相应的得到提高.
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