掺杂是制备硅纳米线半导体器件的一个有效手段.介绍了掺杂硅纳米线的最新进展,主 要就掺杂种类,包括硼、磷及锂掺杂硅纳米线,性能测量,包括光致发光特性、电子输运特性、场 发射特性及其近端 X射线吸收精细结构光谱等及在单电子探测器与计数器、存储元件、纳米线 传感器等最新应用研究进展进行了较详细的讨论,最后对掺杂硅纳米线的发展前景作了展望.
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