用阴极恒电流沉积法制备 SnS薄膜.研究了溶液的 pH值、离子浓度比、电流密度等电沉积 参数对薄膜组分的影响,得出制备 SnS薄膜的理想的工艺条件为: pH=2.7,Sn2+ :S2O32- =1:5, J=3.0mA· cm- 2,t=1.5h,并制备出了成分为 Sn0.995S1.005的膜层.用扫描电镜观察了该薄膜的表 面形貌,用 X射线衍射分析了其物相结构,表明它是具有正交结构的 SnS多晶薄膜 ,晶粒大小不一, 在 200- 800nm之间.用分光光度计测量了该薄膜在 400- 3000nm波段的透射光谱和吸收光谱, 发现其在 400- 900nm波段的透过率较低, 在 950- 1000nm附近有明显的吸收边 , 在波长大于 1000nm后其透过率较大.
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