通过不同 GaAs MMIC的 MIM Si3N4电容结构, 运用 TDDB理论研究分析了斜坡电压下的 MIM Si3N4电容的导电特性和击穿特性,确定了 GaAs MMIC的 MIM Si3N4电容失效不是介质本征 击穿导致失效,而主要是由 Si3N4 介质的缺陷引起.基于缺陷导致介质电场击穿的原理,提出了等 效厚度模型评估和监测 GaAs MMIC的 Si3N4介质电容的质量和可靠性的新方法,可以用于工艺生 产线实现对 Si3N4介质电容的质量和可靠性进行快速评估和监测.
参考文献
| [1] | Kayali S;Ponchak G;Shaw R.GaAs MMIC Reliability Assurance Guideline for Space Applications[J].JPL publication,1996 |
| [2] | Aris Christou.Reliability of Gallium Arsenide MMICs[M].New York:John Wiley & Sons,1991 |
| [3] | Keith A;Jason A .Accelerated Life Testing and Failure Analysis of Single Stage MMIC Amplifier[J].IEEE Transactions on Electron Devices,1994,41(08):1435-1443. |
| [4] | Christianson K A;Roussos J A.Reliability Study of a GaAs MMIC Amplifier[A].,1994:327-331. |
| [5] | 黄云.GaAs微波单片集成电路（MMIC）的可靠性研究[J].微电子技术,2003(01):49-52. |
| [6] | Shiono N;Isumi M.A Lifetime Prediction Model Using Series Model and Acceleration Factors for TDDB Failure of Thin Gate Oxides[A].,1993:1-6. |
| [7] | 恩云飞,孔学东,徐征,赵文斌.栅氧化层TDDB可靠性评价试验及模型参数提取[J].电子产品可靠性与环境试验,2002(01):1-4. |
| [8] | Scarpulla J;David C Eng.A TDDB Model of Si3N4- based Capacitors in GaAs MMICs[A].,1999:128-137. |
| [9] | Bob Yeats .Assessing the reliability of silicon nitride capacitors in a GaAs IC process[J].IEEE Transactions on Electron Devices,1998(4):939-946. |
| [10] | Cramer H;OliVer J;Dix G.MMIC Capacitor Dielectric Reliability[C].GaAs Reliability Workshop,1998:46-51. |
| [11] | Lee Jack C;Chen In- Chin;Hu Chenming .Modeling and Characterization of Gate Oxide Reliability[J].IEEE Transactions on Electron Devices,1998,5(10):2268-2277. |
| [12] | Hiroyuki Tanaka;Hidetsugu Uchida.The Effect of Surface Roughness of Si3N4 Films on TDDB Characteristics of ONO Films[A].,1992:31-37. |
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