研究了γ射线辐照对 InGaAs红外探测器性能的影响.γ射线的辐照剂量分别为 10Mrad、 20Mrad、 30Mrad.测量了器件在不同γ辐照剂量下的响应光谱、电流-电压特性、信号、噪声.通 过对实验结果的分析,发现器件的响应光谱和信号没有发生明显变化;暗电流和噪声随γ辐照剂 量增加而递增,表明探测器的性能随γ辐照剂量的增加而逐步衰减.
参考文献
| [1] | Kozlowski L;Tennant W;Zandian M et al.SWIR StaringFPA Performance at Room Temperature[J].SPIE,1996,2743:93-100. |
| [2] | Hoogeveen RWM.;Goede APH.;van der A RJ. .Extended wavelength InGaAs infrared (1.0-2.4 mu m) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere[J].Infrared physics and technology,2001(1):1-16. |
| [3] | Antoni Rogalski .Infrared detectors: status and trends[J].Progress in Quantum Electronics,2003(2/3):59-210. |
| [4] | Shaw G J;Walters R J;Messenger S R et al.Timedependence of radiation- induced generation currents in irradiated InGaAs photodiodes[J].Journal of Applied Physics,1993,74:1629-1635. |
| [5] | Ohyama H.;Kobayashi K.;Vanhellemont J.;Simoen E.;Claeys C.;Takakura K.;Hirao T.;Onoda S. .Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation[J].Physica, B. Condensed Matter,2003(0):337-340. |
| [6] | 胡新文;李向阳;陆慧庆 等.γ射线辐照对中波 HgCdTe 光导器件性能的影响[J].红外与激光工程,1998,27(06):48-51. |
| [7] | 曹建中.半导体材料的辐射效应[M].北京:科学出版社,1993 |
| [8] | Hu XW.;Wang Q.;Zhao J.;Lu HQ.;Gong HM.;Zhang SK.;Lu F.;Fang JX. .A deep level induced by gamma irradiation in Hg1-xCdxTe[J].Applied physics letters,1998(1):91-92. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%