在Pt/Ti/SiO2/Si基片上采用Sol-Gel法制备了五组分成分梯度分布的KTa1-xNbxO3(x=0.55,0.525,0.50,0.425,040)热释电薄膜.测试结果表明,复合KTN薄膜具有钙钛矿型结构,0.5μmKTN薄膜在15℃至51℃温度范围内,频率1.0kHz时,平均相对介电常数εr=1075,平均介电损耗tanδ=0.011.在室温及120kV/cm下极化30min后,0.5μm复合薄膜在15-51℃温度范围内热释电系数出现峰值,平均热释电系数为3.54×10-6C/(cm2·K),电压响应优值Fv=1.205×10-9C·cm/J,探测度优值Fd=3.768×1-7C·cm/J.该薄膜工作温度范围较宽,作为热释电材料开发应用前景十分广阔.
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