采用Cl2/Ar感应耦合等离子体对InP进行了刻蚀.讨论了直流自偏压、ICP功率、气体总流量和气体组分等因素对刻蚀速率和粗糙度的影响.结果表明Cl2/Ar气体组分是决定刻蚀效果的重要因素.当Cl2含量为30%左右时,刻蚀中的物理溅射与化学反应过程趋于平衡,刻蚀速率处于峰值区,同时刻蚀粗糙度也可达到最小值.SEM照片显示刻蚀表面光洁,侧壁陡直.
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