采用二乙基锌(DEZn)和氧化亚氮(N2O)作为锌源和氧源,在低温300℃,利用金属有机化学气相沉积(MOCVD)的方法在Si(100)衬底上制备了ZnO薄膜.通过优化氧锌比,ZnO薄膜为高度单一c轴方向生长.由光致发光谱和反射谱得知,ZnO薄膜的紫外发光峰位于388nm,具有很好的光透性,且其PL谱半峰宽为80meV.
ZnO films were deposited on Si(100) substrates at 300℃ by metal -organic chemical vapor deposition(MOGVD). The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2:1. And in this optimum growth condition, X - ray diffraction (XRD) and scanning probe morphology (SPM) images indicate that the films grow along the c -axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm..And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence (PL) spectrum shows only strong near- band -edge emissions with little or no deep -level emission related to defects. The full - width at half - maximum (FWHM) of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained.
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