提出了部分耗尽SOI MOSFET物理模型,SOI MOSFET可以看作体硅MOSFET和双极晶体管的结合,模型通过详细地分析SOI器件在各工作区域的工作机理得出,并提取出了相应的模型参数.用本模型得出的模拟数据与器件模拟数据进行了对比,取得了很好的一致性.
A physical model of partially depleted SOI MOSFET was proposed. The SOI MOSFET can be regarded as the combination of bulk silicon MOSFET and bipolar transistor. The model is obtained through detailed analysis of operation mechanism of SOI devices. The model parameters are extracted. The data obtained from this analytical model are compared with device simulation. Excellent agreement is obtained.
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