采用脉冲激光沉积(PLD)法在(001)MgO基片上制备出高质量的SrTiO3(STO)薄膜,构建了Au/STO/MgO结构的叉指电容.在77K、10KHz条件下,对叉指电容的特性进行了测试,结果表明:在40kV/cm的直流电场作用下,电容值从1.75 pF减小为1.25 pF,电容值的相对变化率为28.5%.在此基础上,根据多层介质叉指电容保角变换模型.定量计算和仿真了STO薄膜的介电常数和微波频率下叉指电容的性能参数,并由此设计了一个三阶带通滤波器,该滤波器可实现13.50%的中心频率移动.
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