近年来短波长紫外LED巨大的应用价值引起了人们的高度关注,成为了全球半导体领域研究和投资的新热点.本文综合分析了AlGaN材料的生长、碎裂、掺杂和欧姆接触等问题,对UVLED的发展历程、技术路线和研究进展进行了详细介绍,并展望了未来发展方向.
参考文献
| [1] | Akasaki I;Amano H;Kito K et al.Gallium Arsenide and Related Compounds[J].Inst Phys Conf Ser(Bristol:Institute of Physics),1992,129:851. |
| [2] | Khan M A;Shatalov M;Maruska H P et al.Ⅲ-nitride UV devices[J].Japanese Journal of Applied Physics,2005,44(10):7191. |
| [3] | khan M A;Kuznia J N et al.GaN/AIN digital alloy short -period superlattices by switched atomic layer metalorganic chemical vapor deposition[J].Applied Physics Letters,1993,65(25):3470. |
| [4] | Kamiyama S;Iwaya M;Hayashi N et al.Low-temperature -deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure[J].Journal of Crystal Growth,2001,223:83. |
| [5] | Zhang J P;Wang H M;Gaevski M E et al.Crack-free thick AlGaN grown on sapphire using AlN?AlGaN superlattices for strain management[J].Applied Physics Letters,2002,80(19):3542. |
| [6] | Kim H;Seong T;Adesida L et al.Low-resistance Pt/Pd/An ohmic contacts to p-type AlGaN[J].Applied Physics Letters,2004,84(10):1710. |
| [7] | Han J.;Shul RJ.;Figiel JJ.;Banas M.;Zhang L.;Song YK. Zhou H.;Nurmikko AV.;Crawford MH. .AlGaN/GaN quantum well ultraviolet light emitting diodes[J].Applied physics letters,1998(12):1688-1690. |
| [8] | Allerman A A;Crawford M H;Fischer A J et al.Growth and design of deep-UV (240-290) light emitting diodes using AlGaN alloys[J].Journal of Crystal Growth,2004,272:227. |
| [9] | Nishida T;Kobayashi N .346nm emission from AlGaN Multi-quantum-well light emitting diode[J].Physica Status Solidi A-applied Research,1999,176:45. |
| [10] | Nishida T.;Kobayashi N.;Saito H. .Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice (vol 78, pg 399, 2001)[J].Applied physics letters,2001(12):1795-0. |
| [11] | Toshio Nishida;Hisao Saito;Naoki Kobayashi .Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region[J].Applied physics letters,2001(25):3927-3928. |
| [12] | Toshio Nishida;Hisao Saito;Naoki Kobayashi .Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN[J].Applied physics letters,2001(6):711-712. |
| [13] | Edmond J;Abarea A;Bergmana M et al.High efficiency GaN-based LEDs and lasers on SiC[J].Journal of Crystal Growth,2004,272:242. |
| [14] | Chitnis A;Zhang J P;Adivarahan V et al.324nm light emitting diodes with milliwatt powers[J].Japanese Journal of Applied Physics,2002,41:1A50. |
| [15] | Chitnis A.;Adivarahan V.;Zhang JP.;Shatalov M.;Wu S.;Yang J.;Simin G.;Khan MA.;Hu X.;Fareed Q.;Gaska R.;Shur MS. .Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes[J].Physica Status Solidi, A. Applied Research,2003(1):99-101. |
| [16] | Kamiyama S.;Iwaya M.;Takanami S.;Terao S.;Miyazaki A.;Amano H. Akasaki I. .UV light-emitting diode fabricated on hetero-ELO-grown Al0.22Ga0.78N with low dislocation density[J].Physica Status Solidi, A. Applied Research,2002(2):296-300. |
| [17] | Nishida T;Makimoto T;Saito H et al.AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates[J].Applied Physics Letters,2004,84(06):1002. |
| [18] | Adivarahan V;Zhang J P;Chitnis A et al.Sub-Milliwatt Power Ⅲ -N Light Emitting Diodes at 285 nm[J].Japanese Journal of Applied Physics,2002,41:1A35. |
| [19] | W. H. Sun;J. P. Zhang;V. Adivarahan;A Chitnis;M. Shatalov;S. Wu;V. Mandavilli;J. W. Yang;M. A. Khan .AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW[J].Applied physics letters,2004(4):531-533. |
| [20] | V. Adivarahan;S. Wu;J. P. Zhang;A. Chitnis;M. Shatalov;V. Mandavilli;R. Gaska;M. Asif Khan .High-efficiency 269 nm emission deep ultraviolet light-emitting diodes[J].Applied Physics Letters,2004(23):4762-4764. |
| [21] | Bilenko Y;Lunev A;Hu X et al.10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes[J].Japanese Journal of Applied Physics,2005,44:198. |
| [22] | Adivarahan, V;Sun, WH;Chitnis, A;Shatalov, M;Wu, S;Maruska, HP;Khan, MA .250 nm AlGaN light-emitting diodes[J].Applied Physics Letters,2004(12):2175-2177. |
| [23] | A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart;S. R. Lee;R. J. Kaplar;W. W. Chow;S. R. Kurtz;K. W. Fullmer;J. J. Figiel .Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels[J].Applied physics letters,2004(17):3394-3396. |
| [24] | K. H. Kim;Z. Y. Fan;M. Khizar;M. L. Nakarmi;J. Y. Lin;H. X. Jiang .AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers[J].Applied physics letters,2004(20):4777-4779. |
| [25] | K. Mayes;A. Yasan;R. McClintock;D. Shiell;S. R. Darvish;P. Kung;M. Razeghi .High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well[J].Applied physics letters,2004(7):1046-1048. |
| [26] | Chitnis A;Adivarahan V et al.Submilliwatt operation of AlInGaN based multifinger design 315nm light emitting diode (LED) over sapphire substrate[J].Japanese Journal of Applied Physics,2002,41:1320. |
| [27] | Kim K H;Li J;Jin S X et al.Ⅲ-nitride ultraviolet light-emitting diodes with delta doping[J].Applied Physics Letters,2003,83(03):566. |
| [28] | Jeon S;Gherasimova M;Ren Z et al.High Performance AlGaInN Ultraviolet Light -Emitting Diode at the 340 nm Wavelength[J].Japanese Journal of Applied Physics,2004,43:11409. |
| [29] | Hirayama H;Akita K et al.High -Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates[J].Japanese Journal of Applied Physics,2004,43:11241. |
| [30] | Li Zhong-Hui;Yu Tong-Jun;Yang Zhi-Jian;Tong Yu-Zhen;Zhang guo-Yi;Feng Yu-Chun;Guo Bao-Ping;Niu Han-Ben .Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes[J].Chinese physics letters,2004(9):1845-1847. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%