报道了一种OFET,它采用ITO作为源漏电极,聚酰亚胺为绝缘层,CuPc为半导体层.实验结果表明,该器件具有明显的场效应性质,性能较好,载流子迁移率和开关比分别达2.3×10-3 cm2/V.s、800,表明ITO是一种合适的、有前途的p型OFET源漏极材料.为此,本文对由电极材料和半导体材料间形成的接触电阻对OFET性能影响进行了分析.
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