提出一种采用正面开口进行湿法腐蚀释放热电堆的结构,通过利用高精度光刻、LPCVD(low -pressure chemical vapor deposition)薄膜生长、IBE(ion beam etching)干法刻蚀、TMAH ((CH3)4NOH)腐蚀等微机械加工技术,设计并制作了CMOS兼容的微机械多晶硅热电堆红外探测器.实验得到的器件成品率达到90%以上,响应率为12.5 V/W,探测率1×107 cmHz1/2/W,为进一步大规模红外面阵研究奠定了基础.
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