本文对注N、注F的SIMOX/NMOSFET器件的抗辐射特性进行了研究,发现两者都能减少埋氧层及其界面的空穴陷阱,对辐射加固有所改善,特别是对大剂量辐射的加固更为明显.总体来说,在此能量下,离子注入剂量越大,加固越好.由于注入的剂量对片子本身的阈值电压有很大影响,所以选择对于器件初始特性影响较小的剂量及能量非常重要.
Radiation hardness of SIMOX (separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper. Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions, which consequently improves the radiation hardness, especially under high dose radiation conditions. Moreover, experimental data show that the higher dose of the N and F ion implantation is, the better radiation hardness is achieved. In order to minimize the influence on the threshold voltage of devices, it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.
参考文献
| [1] | Mrstik B.J.;Hughes H.L. .Hole and electron trapping in ion implanted thermal oxides and SIMOX[J].IEEE Transactions on Nuclear Science,2000(6):2189-2195. |
| [2] | Brady F.T.;Li S.S. .A study of the effects of processing on the response of implanted buried oxides to total dose irradiation[J].IEEE Transactions on Nuclear Science,1990(6):1995-2000. |
| [3] | SlawinskiC;Mao B Y;Chang P H et al.The Physical and electrical properities of buriednitrideSOI structures synthesized by nitrogen ion implantation[J].Proc Mater Res Soc,1986,53:269. |
| [4] | Barchuk I.P.;Kilchitskaya V.I. .Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric[J].IEEE Transactions on Nuclear Science,1997(6):2542-2552. |
| [5] | Yi W B;Zhang E X;Chen M et al.Formation of total-dose -radiation harden materials by sequential oxyen and nitrogen implantation and multi -step annealing[J].Semiconductor Science and Technology,2004,19:1. |
| [6] | Jian-Zhong Cao.The Radiation Effect of Semiconductor Materials[M].北京:科学出版社,1993 |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%