利用铝阳极氧化方法对微晶玻璃基板上的多层铝膜进行选择性氧化,制备了4层布线的高密度MCM-D基板,对氧化得到的多孔型氧化铝介质膜的绝缘及介电性能进行了研究.实验结果表明:多层布线铝与氧化铝结合性好,层间和同层多孔氧化铝绝缘电阻分别达到109Ω和1011Ω以上;多孔型氧化铝的相对介电常数和损耗分别为5.73和0.022(1MHz);导带、互连通孔与绝缘层所形成的层间通孔互连结构共面性好,具有良好的电互连性能.多孔型氧化铝介质膜适用于制备高密度MCM-D基板.
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