掺杂SnS薄膜的制备及电学性能

功能材料与器件学报 , 2007, 13(6): 651-654. doi: 10.3969/j.issn.1007-4252.2007.06.026

掺杂SnS薄膜的制备及电学性能

郭余英 ^1, , 史伟民 ^2, , 魏光普 ^3, , 邱永华 ^4, , 夏义本 ^5,

1.上海大学材料科学与工程学院电子信息材料系,上海,200072

2.上海大学材料科学与工程学院电子信息材料系,上海,200072

3.上海大学材料科学与工程学院电子信息材料系,上海,200072

4.上海大学材料科学与工程学院电子信息材料系,上海,200072

5.上海大学材料科学与工程学院电子信息材料系,上海,200072

基金项目: 上海市科学技术委员会专项基金重点项目(03DZ12033) 上海市科委资助项目(06ZR14035) AM基金(06SA08) 上海市重点学科建设项目(T0101)

关键词：硫化锡 , 太阳电池 , 掺杂 , 真空蒸发 , 电阻率

Electrical properties of doped SnS thin films prepared by vacuum evaporation

硫化锡(SnS)具有很高的光吸收系数和合适的禁带宽度,又无毒性,因此在太阳电池等光电器件中具有潜在应用价值.本文用真空蒸发法制备掺杂的SnS薄膜,掺杂源有Sb、Sb2O3、Se、Te、In、In2O3、Se和In2O3的混合物.对各种掺杂SnS薄膜的厚度、电流-电压(I-V)特性等进行了表征,并计算了其电阻率和光电导与暗电导的比值(Gphoto/Gdark).结果表明较有效的掺杂源是Sb,Sb掺杂的薄膜电阻率比纯薄膜的电阻率降低四个数量级,Gphoto/Gdark增加约一倍.同时,研究了Sb掺杂量对SnS薄膜电学性能的影响,表明Sb的最佳掺入量约为1.3wt%～1.5wt%.

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