系统论述了钙钛矿结构氧化物电脉冲诱发可逆变阻效应的非挥发存储机理,对三种物理模型:体效应模型、界面效应模型和导电畴隧穿模型进行了详细讨论,并提出了可逆变阻效应的实用化所面临的关键问题及其发展方向.
参考文献
| [1] | 刘俊明,王克锋.稀土掺杂锰氧化物庞磁电阻效应[J].物理学进展,2005(01):82-130. |
| [2] | 王克锋,刘俊明.稀土锰氧化物的低场磁电阻效应[J].物理学进展,2003(02):192-211. |
| [3] | Y. Tokura;Y. Tomioka .Colossal magnetoresistive manganites[J].Journal of Magnetism and Magnetic Materials,1999(1/3):1-23. |
| [4] | Salamon MB.;Jaime M. .The physics of manganites: Structure and transport [Review][J].Reviews of Modern Physics,2001(3):583-628. |
| [5] | Prellier W;Lecoeur P;Mercey B .Colossal-magnetoresistive manganite thin films[J].Journal of Physics:Condensed Matter,2001,13:915-944. |
| [6] | Furukawa N;Motome Y .Colossal magnetoresistance and quenched disorder in manganese oxides[J].Journal of the Physical Society of Japan,2005,74(zk):203-207. |
| [7] | S. Q. Liu;N. J. Wu;A. Ignatiev .Electric-pulse-induced reversible resistance change effect in magnetoresistive films[J].Applied physics letters,2000(19):2749-2751. |
| [8] | Beck A;Bednorz J G;Gerber C et al.Microelectronic device for storing information and method thereof[P].WO 0049659,2000. |
| [9] | A. Beck;J. G. Bednorz;Ch. Gerber .Reproducible switching effect in thin oxide films for memory applications[J].Applied physics letters,2000(1):139-141. |
| [10] | R. Oligschlaeger;R. Waser;R. Meyer;S. Karthauser;R. Dittmann .Resistive switching and data reliability of epitaxial (Ba,Sr)TiO_(3) thin films[J].Applied physics letters,2006(4):042901-1-042901-3-0. |
| [11] | Dooho Choi;Dongsoo Lee;Hyunjun Sim;Man Chang;Hyunsang Hwang .Reversible resistive switching of SrTiO_(x) thin films for nonvolatile memory applications[J].Applied physics letters,2006(8):082904-1-082904-3-0. |
| [12] | Watanabe Y;Bednorz J G;Bietsch A et al.Currentdriven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals[J].Applied Physics Letters,2001,78(23):3738-3740. |
| [13] | Field-driven hysteretic and reversible resistive switch at the Ag-Pr_(0.7)Ca_(0.3)MnO_(3) interface[J].Applied physics letters,2003(5):957-959. |
| [14] | A. Sawa;T. Fujii;M. Kawasaki;Y. Tokura .Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr_(0.7)Ca_(0.3)MnO_(3) interface[J].Applied physics letters,2004(18):4073-4075. |
| [15] | Xie Y W;Sun J R;Wang D J et al.Reversible electroresistance at the Ag/La0.67SrO.33MnO3 interface[J].Journal of Applied Physics,2006,100:033704. |
| [16] | Hamaguchi M;Aoyama K;Asanuma S et al.Electric-fieldinduced resistance switching universally observed in transition-metal-oxide thin films[J].Applied Physics Letters,2006,88:142508. |
| [17] | Chen X;Wu NJ;Strozier J;Ignatiev A .Direct resistance profile for an electrical pulse induced resistance change device[J].Applied physics letters,2005(23):33506-1-33506-3-0. |
| [18] | Dong R;Wang Q;Chen L D et al.Retention behavior of the electric pulse induced reversible resistance change effect in Ag-La0.7Ca0.3Mn03-Pt sandwiches[J].Applied Physics Letters,2005,86(17):172107. |
| [19] | Kim C J;Chen I W .Resistance switching of AL/(Pr,ca) MnO3 thin films[J].Japanese Journal of Applied Physics,2005,44(17):L525-L527. |
| [20] | Hsu D;Lin J G;Wu W F.Resistive switching effects in Nd0.7Ca0.3MnO3 manganite[J].Journal of Magnetism and Magnetic Materials,2006 |
| [21] | Chang Jung KIM;Byung Ik KIM;I-Wei CHEN .Dependence of Electrode on Switching Effect of Pr_(1-x)Ca_xMnO_3 Thin Film[J].Japanese journal of applied physics,2005(3):1260-1261. |
| [22] | Zhuang W W;Pan W;Ulrich B D.Novell colossal magnetoresistive thin film nonvolatile resistance random access memory(RRAM)[A].,2002:193-196. |
| [23] | M. J. Rozenberg;I. H. Inoue;M. J. Sanchez .Nonvolatile Memory with Multilevel Switching: A Basic Model[J].Physical review letters,2004(17):178302.1-178302.4. |
| [24] | Inoue I H;Rozenberg M J;Yasuda S.Strong electron correlation effects in non-volatile electronic memory devices[A].,2005:131-135. |
| [25] | M.J. Rozenberg;I.H. Inoue;M.J. Sanchez .A model for non-volatile electronic memory devices with strongly correlated materials[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):24-27. |
| [26] | Rozenberg M J;Inoue I H;Sanchez M J .Strong electron correlation effects in nonvolatile electronic memory devices[J].Applied Physics Letters,2006,88:033510. |
| [27] | S. Tsui;A. Baikalov;J. Cmaidalka;Y. Y. Sun;Y. Q. Wang;Y. Y. Xue;C. W. Chu;L. Chen;A. J. Jacobson .Field-induced resistive switching in metal-oxide interfaces[J].Applied physics letters,2004(2):317-319. |
| [28] | T. Fujii;M. Kawasaki;A. Sawa;H. Akoh;Y. Kawazoe;Y. Tokura .Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO_3/SrTi_(0.99)Nb_(0.01)O_3[J].Applied physics letters,2005(1):012107.1-012107.3. |
| [29] | Simmons J G;Verderber R R et al.New conduction and reversible memory phenomena in thin insulating films[J].Proceedings of the Royal Society of London:Series A,1967,301(1464):77-102. |
| [30] | Becker T.;Streng C.;Luo Y.;Moshnyaga V.;Damaschke B.;Shannon N. Samwer K. .Intrinsic inhomogeneities in manganite thin films investigated with scanning tunneling spectroscopy - art. no. 237203[J].Physical review letters,2002(23):7203-0. |
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